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Growth of semiconductor epitaxial films and layered systems by means of
metal organic chemical vapour phase epitaxy, in particular from the group III-nitrides
(Ga,Al)N and of ZnO.
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Application of self organized quantum dots as active medium in new semiconductor
devices for electronic and optoelectronic applications. Investigation of the growth correlated
characteristics of low dimensional semiconductor structures, in particular the
influence of kinetic and thermodynamic factors during the heteroepitaxy of highly strained
systems. Transition of the two-dimensional Frank - van der Merwe to the three-dimensional
Stranski - Krastanow growth mode.
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Deposition of amorphous and nano crystalline semiconductors (a-Si:H,nc-Ge,nc-AlN)
and metals (Al,Mo,W) by means of cathodic sputtering and plasma-CVD
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Fundamental experimental investigations and computer simulations for layer deposition
by means of cathodic sputtering
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Structural investigations of such layers and layered systems by means of conventional
and high resolution X-ray methods
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Characterisation of semiconductor devices (single electron transistors, detectors,
sensors, luminescence diodes, laser diodes)
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Investigations of the electronic transport of semiconductors and thin metallic films
at low temperatures (to 4 K) and high magnetic fields (to 7 T)
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Fabrication of semiconductor components (detectors, sensors etc..) on the basis of
the epitaxial semiconductor layer structures and their characterisation
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