Older publications

2011

Comment on “The effects of Si doping on dislocation movement and tensile stress in GaN films” [J. Appl. Phys. 109, 073509 (2011)]
A. Dadgar and A. Krost, Journal of Applied Physics 110, 096101 (2011), abstract
Thin-film InGaN/GaN Vertical Light Emitting Diodes Using GaNon Silicon-On-Insulator Substrates
Surani Bin Dolmanan, Siew Lang Teo, Vivian Kaixin Lin, Hui Kim Hui, Armin Dadgar, Alois Krost, and Sudhiranjan Tripathy, Electrochemical and Solid-State Letters 14, H460 (2011), abstract
AlGaN/GaN-based HEMTs for electrical stimulation of neuronal cell cultures
H. Witte, C. Warnke, T. Voigt, A. de Lima, I. Ivanov, T.R. Vidakovic-Koch, K. Sundmacher, and A. Krost, Journal of Physics D: Applied Physics 44, 355501 (2011), abstract
Al_xGa_1-xN/GaN heterostructures on thin silicon-on-insulator substrate for metal-semiconductor-metal photodetectors
Vivian Kaixin Lin, Surani Dolmanan, Siewlang Teo, Huihui Kim, Esther Alarcon, Armin Dadgar, Alois Krost, and Sudhiranjan Tripathy, Journal of Physics D: Applied Physics 44, 365102 (2011), abstract
Eliminating stacking faults in semi-polar GaN by AlN interlayers
A. Dadgar, R. Ravash, P. Veit, G. Schmidt, M. Müller, A. Dempewolf, F. Bertram, M. Wieneke, J. Christen, and A. Krost, Applied Physics Letters 99, 021905 (2011), abstract
Electrical investigations of AlGaN/AlN structures for LEDs on Si(111)
H. Witte, A. Rohrbeck, K.-M. Günther, P. Saengkaew, J. Bläsing, A. Dadgar, and A. Krost, Physica Status Solidi A 208, 1597 (2011), abstract
Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
Georg Rossbach, Martin Feneberg, Marcus Röppischer, Christoph Werner, Norbert Esser, Christoph Cobet, Tobias Meisch, Klaus Thonke, Armin Dadgar, Jürgen Bläsing, Alois Krost, and Rüdiger Goldhahn, Physical Review B 83, 195202 (2011), abstract
Improving GaN-on-silicon properties for GaN device epitaxy
A. Dadgar, T. Hempel, J. Bläsing, O. Schulz, S. Fritze, J. Christen, and A. Krost, Physica Status Solidi C 8, 1503 (2011), abstract
Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors
Pascal Moser, Jürgen Bläsing, Armin Dadgar, Thomas Hempel, Jürgen Christen, and Alois Krost, Japanese Journal of Applied Physics 50, 031002 (2011), abstract
Unintentional doping of a-plane GaN by insertion of in situ SiN masks
H. Witte, M. Wieneke, A. Rohrbeck, K.-M. Guenther, A. Dadgar, and A. Krost, Journal of Physics D: Applied Physics 44, 085102 (2011), abstract
Characterization of AlGaInN layers using X-ray diffraction and fluorescence
Lars Groh, Christoph Hums, Jürgen Bläsing, Alois Krost, and Armin Dadgar, Physica Status Solidi B 248, 622 (2011), abstract
Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
Matthias Wieneke, Martin Noltemeyer, Barbara Bastek, Antje Rohrbeck, Hartmut Witte, Peter Veit, Jürgen Bläsing, Armin Dadgar, Jürgen Christen, and Alois Krost, Physics Status Solidi B 248, 578 (2011), abstract
Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon
Roghaiyeh Ravash, Juergen Blaesing, Thomas Hempel, Martin Noltemeyer, Armin Dadgar, Juergen Christen, and Alois Krost, Physica Status Solidi B 248, 594 (2011), abstract
Growth and coalescence behavior of semipolar (1122) GaN on pre-structured r-plane sapphire substrates
Stephan Schwaiger, Sebastian Metzner, Thomas Wunderer, Ilona Argut, Johannes Thalmair, Frank Lipski, Matthias Wieneke, Jürgen Bläsing, Frank Bertram, Josef Zweck, Alois Krost, Jürgen Christen, and Ferdinand Scholz, Physics Status Solidi B 248, 588 (2011), abstract
Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping
Armin Dadgar, Jürgen Bläsing, Annette Diez, and Alois Krost, Applied Physics Express 4, 011001 (2011), abstract
Stranski–Krastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures
A. Krost, C. Berger, P. Moser, J. Bläsing, A. Dadgar, C. Hums, T. Hempel, B. Bastek, P. Veit, and J Christen, Semiconductor Science and Technology 26, 014041 (2011), abstract
Optical investigation of a hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirror
A. Franke, B. Bastek, J. Krimmling, J. Christen, P. Moser, A. Dadgar, and A. Krost, Superlattices and Microstructures 49, 187 (2011), abstract

2010

III–V Compound Semiconductors: Integration with Silicon-Based Microelectronics
Editors: Tingkai Li, Michael Mastro, and Armin Dadgar, CRC-Press (2010), ISBN 9781439815229 Link to book
Temperature rise in InGaN/GaN vertical light emitting diode on copper transferred from silicon probed by Raman scattering
Esther Alarcón-Lladó, Surani Bin-Dolmanan, Vivian Kai Xin Lin, Siew Lang Teo, Armin Dadgar, Alois Krost, and Sudhiranjan Tripathy, Journal of Applied Physics 108, 114501 (2010), abstract
InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN
M. Mikulics, R. Stoklas, A. Dadgar, D. Gregušová, J. Novák, D. Grützmacher, A. Krost, and P. Kordos, Applied Physics Letters 97, 173505 (2010), abstract
Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering
A. Krost, C. Berger, J. Bläsing, A. Franke, T. Hempel, A. Dadgar, and J. Christen, Applied Physics Letters 97, 181105 (2010), abstract
Strain profiling of AlInN/GaN distributed Bragg reflectors using in situ curvature measurements and ex situ X-ray diffraction
C. Berger, P. Moser, A. Dadgar, J. Bläsing, R. Clos, A. Krost, Materials Science and Engineering A 528, 58 (2010), abstract
Semipolar single component GaN on planar high index Si(11h) substrates
Roghaiyeh Ravash, Juergen Blaesing, Armin Dadgar, and Alois Krost, Applied Physics Letters 97, 142102 (2010), abstract
Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
E. Sakalauskas, H. Behmenburg, C. Hums, P. Schley, G. Rossbach, C. Giesen, M. Heuken, H. Kalisch, R.H. Jansen, J. Bläsing, A. Dadgar, A. Krost, and R. Goldhahn, Journal of Physics D: Applied Physics 43, 365102 (2010), abstract
Luminescence Properties of Photonic Crystal InGaN/GaN Light Emitting Layers on Silicon-on-Insulator
Vivian K. X. Lin, S. Tripathy, S. L. Teo, S. B. Dolmanan, A. Dadgar, M. Noltemeyer, A. Franke, F. Bertram, J. Christen, and A. Krost, Electrochemical and Solid-State Letters 13, H343 (2010), abstract
Monitoring glycolytic oscillations using AlGaN/GaN high electron mobility transistors (HEMTs)
C. Warnke, H. Witte, T. Mair, M.J.B. Hauser, A. Dadgar, and A. Krost, Sensors and Actuators B 149, 310 (2010), abstract
Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers
Stefan Lautenschlaeger, Sebastian Eisermann, Michael N. Hofmann, Udo Roemer, Melanie Pinnisch, Andreas Laufer, Bruno K. Meyer, Holger von Wenckstern, Alexander Lajn, Florian Schmidt, Marius Grundmann, Jürgen Bläsing, and Alois Krost, Journal of Crystal Growth 31, 2078 (2010), abstract
Microstructure of gallium nitride films grown on silicon (110)
F. Ruiz-Zepeda, O. Contreras, A. Dadgar, and A. Krost, Applied Physics Letters 96, 231908 (2010), abstract
Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains
B. Bastek, O. August, T. Hempel, J. Christen, M. Wieneke, J. Bläsing, A. Dadgar, A. Krost, and U. Wendt, Applied Physics Letters 96, 172102 (2010), abstract
Valence-band splitting and optical anisotropy of AlN
G. Rossbach, M. Röppischer, P. Schley, G. Gobsch, C. Werner, C. Cobet, N. Esser, A. Dadgar, M. Wieneke, A. Krost, and R. Goldhahn, Physica Status Solidi B 247, 1679 (2010), abstract
Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates
P. Schley, J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, J.S. Speck, and R. Goldhahn, Physica Status Solidi A 207, 1062 (2010), abstract
X-ray Study of Step Induced Lateral Correlation Lengths in Thin AlGaN Nucleation Layers
Matthias Wieneke, Jürgen Bläsing, Armin Dadgar, and Alois Krost, Japanese Journal of Applied Physics 49, 025503 (2010), abstract
Light extraction from GaN-based LED structures on silicon-on-insulator substrates
S. Tripathy, S.L. Teo, V.K.X. Lin, M.F. Chen, A. Dadgar, J. Christen, and A. Krost, Physica Status Solidi C 7, 88 (2010), abstract
Impedance spectroscopy of AlGaN/GaN HEMTs in contact with culture media
Hartmut Witte, Michael Charpentier, Christian Warnke, Mathias Mueller, Kay-Michael Guenther, Armin Dadgar, and Alois Krost, Physica Status Solidi C 7, 464 (2010), abstract
Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces
F. Reiher, A. Dadgar, J. Bläsing, M. Wieneke and A. Krost, Journal of Crystal Growth 312, 180 (2010), abstract

2009

High-Overtone Bulk Acoustic Wave resonator on Galliumnitride
Marc Loschonsky, David Eisele, Jeremy Masson, Matthias Wieneke, Sebastien Alzuaga, Armin Dadgar, Sylvain Ballandras, Alois Krost, and Leonhard Reindl, 2009 JOINT MEETING OF THE EUROPEAN FREQUENCY AND TIME FORUM AND THE IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM, VOLS 1 AND 2 Book Series: IEEE International Frequency Control Symposium, 309 (2009), abstract
Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates
Roghaiyeh Ravash, Jürgen Bläsing, Thomas Hempel, Martin Noltemeyer, Armin Dadgar, Jürgen Christen, and Alois Krost, Applied Physics Letters 95, 242101 (2009), abstract
Characterization of defects in undoped non c-plane and high resistance GaN layers dominated by stacking faults
H. Witte, K.-M. Guenther, M. Wieneke, J. Blaesing, A. Dadgar, and A. Krost, Physica B 404, 4922 (2009), abstract
Spatial control of the energy metabolism of yeast cells through electrolytic generation of oxygen
Christian Warnke, Thomas Mair, Hartmut Witte, Antje Reiher, Marcus J.B. Hauser, and Alois Krost, Physical Biology 6, 046011 (2009), abstract
Photoelectric properties of the undoped GaN/AlN interlayer/high purity Si(1 1 1) interface
H Witte, C Hums, C Baer, K-M Guenther, A Krtschil, A Dadgar and A Krost, Journal of Physics D: Applied Physics 42, 205103 (2009), abstract
Fast, micrometer scale characterization of group-III nitrides with laboratory X-ray diffraction
Alois.Krost and Jürgen Bläsing, Materials Science and Engineering A 524, 82 (2009), abstract
Fabrication, Self-Assembly, and Properties of Ultrathin AlN/GaN Porous Crystalline Nanomembranes: Tubes, Spirals, and Curved Sheets
Yongfeng Mei, Dominic J. Thurmer, Christoph Deneke, Suwit Kiravittaya, Yuan-Fu Chen, Armin Dadgar, Frank Bertram, Barbara Bastek, Alois Krost, Jürgen Christen, Thomas Reindl, Mathieu Stoffel, Emica Coric, and Oliver G. Schmidt, ACSNano 3, 1663 (2009), abstract
Low-temperature/high-temperature AlN superlattice buffer layers for high-quality Al_xGa_1-xN on Si (1 1 1)
Phannee Saengkaew, Armin Dadgar, Jürgen Bläsing, Thomas Hempel, Peter Veit, Jürgen Christen, and Alois Krost, Journal of Crystal Growth 311, 3742 (2009), abstract
Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications
H.P.D. Schenk, S.I. Borenstain, A. Berezin, A. Schön, E. Cheifetz, A. Dadgar, and A. Krost, Journal of Crystal Growth 311, 3984 (2009), abstract
Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy
Barbara Bastek, Frank Bertram, Juergen Christen, Thomas Hempel, Armin Dadgar, and Alois Krost, Applied Physics Letters 95, 032106 (2009), abstract
Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction
Matthias Wieneke, Jürgen Bläsing, Armin Dadgar, Peter Veit, Sebastian Metzner, Frank Bertram, Jürgen Christen, and Alois Krost, Physica Status Solidi C 6, S498 (2009), abstract
GaN-based deep green light emitting diodes on silicon-on-insulator substrates
S. Tripathy, A. Dadgar, K. Y. Zang, V. K. X. Lin, Y. C. Liu, S. L. Teo, A. M. Yong, C. B. Soh, S. J. Chua, J. Bläsing, J. Christen, and A. Krost, Physica Status Solidi C 6, S822 (2009), abstract
MOVPE growth of high-quality Al_0.1Ga_0.9N on Si(111) substrates for UV-LEDs
Phannee Saengkaew, Armin Dadgar, Juergen Blaesing, Barbara Bastek, Frank Bertram, Fabian Reiher, Christoph Hums, Martin Noltemeyer, Thomas Hempel, Peter Veit, Juergen Christen, and Alois Krost, Physica Status Solidi C 6, S455 (2009), abstract
AlInN/GaN based multi quantum well structures – growth and optical properties
Christoph Hums, Aniko Gadanecz, Armin Dadgar, Jürgen Bläsing, Pierre Lorenz, Stefan Krischok, Frank Bertram, Alexander Franke, J. A. Schaefer, Jürgen Christen, and Alois Krost, Physica. Status Solidi C 6, S451 (2009), abstract
InGaN/GaN light-emitting diodes on Si(110) substrates grown by metalorganic vapour phase epitaxy
F Reiher, A Dadgar,J. Bläsing, M Wieneke,M Müller,A Franke,L Reißmann, J Christen, and A Krost, Journal of Physics D: Applied Physics 42, 055107 (2009), abstract
Influence of anisotropic strain on excitonic transitions in a-plane GaN films
C. Buchheim, M. Röppischer, R. Goldhahn, G. Gobsch, C. Cobet, C. Werner, N. Esser, A. Dadgar, M. Wieneke, J. Bläsing, and A. Krost, Microelectronics Journal 40, 322 (2009), abstract
Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study
J. Bläsing, A. Krost, J. Hertkorn, F. Scholz, L. Kirste, A. Chuvilin, and U. Kaiser, Journal of Applied Physics 105, 033504 (2009), abstract

2008

MOVPE Growth and Characterization of AlInN FET Structures on Si(111)
Christoph Hums, Aniko Gadanecz, Armin Dadgar, Jürgen Bläsing, Hartmut Witte, Thomas Hempel, Annette Dietz, Pierre Lorenz, Stefan Krischok, Jürgen Alois Schaefer, Jürgen Christen, and Alois Krost, Materials Research Society Symposium Proceedings 1068, 45 (2008), abstract
GaN-based microdisk light emitting diodes on (111)-oriented nanosilicon-on-insulator templates
S. Tripathy, T. E. Sale, A. Dadgar, V. K. X. Lin, K. Y. Zang, S. L. Teo, S. J. Chua, J. Bläsing, and A. Krost, Journal of Applied Physics 104, 053106 (2008), abstract
Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
K. Brueckner, F. Niebelschuetz, K. Tonisch, S. Michael, A. Dadgar, A. Krost, V. Cimalla, O. Ambacher, R. Stephan, and M. A. Hein, Applied Physics Letters 93, 173504 (2008), abstract
Interdigitated Electrodes and Their Possibility to Determine the Excitation Region in Neurons in Cultured Networks
A. Reiher, A.D. de Lima, H. Witte, A. Krtschil, A. Nörenberg, T. Voigt, and A. Krost, Sensor Letters 6, 601 (2008), abstract
Atomic Arrangement at the AlN/Si(110) Interface
Oscar E. Contreras, Francisco Ruiz-Zepeda, Armin Dadgar, Alois Krost, and Fernando A. Ponce, Applied Physics Express 1, 061104 (2008), abstract
MOVPE growth of blue In_xGa_1–xN/GaN LEDs on 150 mm Si(001)
F. Schulze, A. Dadgar, A. Krtschil, C. Hums, L. Reissmann, A. Diez, J. Christen, and A. Krost, Physica Status Solidi (c) 5, 2238 (2008), abstract

2007

InGaN/GaN light emitting diodes on nanoscale silicon on insulator
S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, Applied Physics Letters 91, 231109 (2007), abstract
Epitaxy of GaN on silicon — impact of symmetry and surface reconstruction
A. Dadgar, F Schulze, M Wienecke, A Gadanecz, J Bläsing, P Veit, T Hempel, A Diez, J Christen, and A Krost, New Journal of Physics 9, 389 (2007), abstract
Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode
S. Heinze, A. Krtschil, J. Bläsing, T. Hempel, P. Veit, A. Dadgar, J. Christen, and A. Krost, Journal of Crystal Growth 308, 170 (2007), abstract
Erratum: “Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range” [Appl. Phys. Lett. 90, 022105 (2007)]
C. Hums, J. Bläsing, A. Dadgar, A. Diez, T. Hempel, J. Christen, A. Krost, K. Lorenz, and E. Alves, Applied Physics Letters 91, 139901 (2007), abstract
H₂O₂-molecular beam epitaxy of high quality ZnO
A. El Shaer, A. Bakin, A. Che Mofor, J. Blaesing, A. Krost, J. Stoimenos, B. Pecz, M. Kreye, and A. Waag, Applied Physics A: Materials Science & Processing 88, 57 (2007), abstract
Electrical characterization of defect states in local conductivity domains in ZnO:N,As
André Krtschil, Armin Dadgar, Annette Diez, and Alois Krost, Journal of Materials Research 22, 1775 (2007)
Homoepitaxy of ZnO: from the substrates to doping
C. Neumann, S. Lautenschläger, S. Graubner, J.Sann, N. Volbers, B.K. Meyer, J. Bläsing, A. Krost, F. Bertram, and J. Christen, Physica Status Solidi (b) 244, 1451 (2007), abstract
Investigation of ZnO substrates: effects of high temperature annealing
S. Graubner, C. Neumann, A. Krost, J. Bläsing, and B.K. Meyer, Physica Status Solidi (b) 244, 1490 (2007), abstract
Thermal stability of metal organic vapor phase epitaxy grown AlInN
A. Gadanecz, J. Bläsing, A. Dadgar, C. Hums, and A. Krost, Applied Physics Letters 90, 221906 (2007), abstract
Controlled low temperature fabrication of ZnO nanopillars with a wet-chemical approach
B. Postels, H.-H. Wehmann, A. Bakin, M. Kreye, D. Fuhrmann, J. Bläsing, A. Hangleiter, A. Krost, and A. Waag, Nanotechnology 18, 195602 (2007), abstract
Metalorganic vapor phase epitaxy of ZnO: towards p-type conductivity
S. Heinze, A. Dadgar, F. Bertram, A. Krtschil, J. Bläsing, H. Witte, S. Tiefenau, T. Hempel, A. Diez, J. Christen, and A. Krost, Proceedings of SPIE 6474, Zinc Oxide Materials and Devices II, ed by F.H. Teherani and C.W. Litton, 647406 (2007)
Thin film growth of ZnO and its relation to substrate properties
S. Lautenschläger, C. Neumann, S. Graubner, J. Sann, F. Eylert, N. Volbers, B.K. Meyer, J. Bläsing, A. Krost, F. Bertram, and J. Christen, Proceedings of SPIE 6474, Zinc Oxide Materials and Devices II, ed by F.H. Teherani and C.W. Litton, 64740H (2007)
MOVPE growth of GaN on Si – Substrates and strain
A. Dadgar, P. Veit, F. Schulze, J. Bläsing, A. Krtschil, H. Witte, A. Diez, T. Hempel, J. Christen, R. Clos, and A. Krost, Thin Solid Films 515, 4356 (2007), abstract
Study on anomalous high p-type conductivity in ZnO substrate prepared by ultrasonic spray pyrolysis
Jun-Liang Zhao, Xiao-Min Li, André Krtschil, Alois Krost, Wei-Dong Yu, Yi-Wen Zhang, Yan-Fei Gu, and Xiang-Dong Gao, Applied Physics Letters 90, 062118 (2007), abstract
Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate
C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, Journal of Applied Physics 101, 033113 (2007), abstract
Preparation of ZnO substrates for epitaxy: Structural, surface, and electrical properties
S. Graubner, C. Neumann, N. Volbers, B. K. Meyer, J. Bläsing, and A. Krost, Applied Physics Letters 90, 042103 (2007), abstract
Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction
R. Goldhahn, A. T. Winzer, A. Dadgar, A. Krost, O. Weidemann, and M. Eickhoff, Physica Status Solidi (a) 204, 447 (2007), abstract
Complex excitonic recombination kinetics in ZnO: Capture, relaxation, and recombination from steady state
F. Bertram, J. Christen, A. Dadgar, and A. Krost, Applied Physics Letters 90, 041917 (2007), abstract
Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range
C. Hums, J. Bläsing, A. Dadgar, A. Diez, T. Hempel, J. Christen, A. Krost, K. Lorenz, and E. Alves, Applied Physics Letters 90, 022105 (2007), abstract
Blue light emitting diodes on Si(001) grown by MOVPE
F. Schulze, A. Dadgar, F. Bertram, J. Bläsing, A.Diez, P.Veit, R.Clos, J.Christen, and A.Krost, Physica Status Solidi (c) 4, 41 (2007), abstract
Laser-Interference Lithography Tailored for Highly Symmetrically Arranged ZnO Nanowire Arrays
Dong Sik Kim, Ran Ji, Hong Jin Fan, Frank Bertram, Roland Scholz, Armin Dadgar, Kornelius Nielsch, Alois Krost, Jürgen Christen, Ulrich Gösele, and Margit Zacharias, Small 3, 76 (2007), abstract
Crystallographic and electric properties of MOVPE grown AlGaN/GaN-based FETs on Si(001) substrates
F. Schulze, O. Kisel, A. Dadgar, A. Krtschil, J. Bläsing, M. Kunze, I. Daumiller, T. Hempel, A. Diez, R. Clos, J. Christen, and A. Krost, Journal of Crystal Growth 299, 399 (2007), abstract

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