Otto-von-Guericke Universität Magdeburg, FNW/IEP/AHE, Postfach 4120, 39016 Magdeburg,
Tel: +49-391-67 18668/18347, Fax: +49-391-67 11130

Publikationen der Abteilung Halbleiterepitaxie bis 2000, ab 2000

1980

/1/ W. Richter, U. Nowak, A. Krost, Raman Scattering from LO-Phonon-Plasmons in SeImiconductors, Proc. VIIth Int. Conf. on Raman Spectroscopy, Ottawa 1980, ed. by W.F. Murphy, North-Holland Publ. Comp., Amsterdam (1980), p. 74

/2/ A. Krost, P. Grosse, Epitaxial Growth of EuSe Crystals by the Hot-Wall Technique, phys. stat. sol. (a) 59, K31 (1980)

1981

/3/ W. Jantsch, G. Bauer, A. Krost, A. Lopez-Otero, Optical Properties of Pb1-xGexTe in the Rhombohedral (C3v) and Cubic Phase, Ferroelectrics, 38, 905 (1981)

1982

/4/ A. Krost, P. Grosse, Growth of Sb2Te3 Single Crystals by Hot-Wall-Epitaxy, Lecture Notes in Physics 152, ed. by E. Gornik, H. Heinrich and L. Palmetshofer, Springer-Verlag, Berlin-Heidelberg-New York (1982), p. 49

/5/ W. Richter, A. Krost, U. Nowak, E. Anastassakis, Anisotropy and Dispersion of Coupled Plasmon-LO-Phonon-Modes in Sb2Te3, Z. Phys. B49, 191-98 (1982)

1983

/6/ A. Krost, Properties of Vx-VIy-compounds in, Landolt-Börnstein 17f, Basic properties of semiconductors, ed. by O. Madelung, Springer-Verlag, Berlin-Heidelberg-New York (1983), ps. 234-280 and 486-559

1985

/7/ A. Krost, B. Harbecke, R. Faymonville, R. Schlegel, E.J. Fantner, K.E. Ambrosch, G. Bauer, Growth and characterisation of Pb1-xEuxTe, J. Phys. C18, 2119-43 (1985)

1987

/8/ Ch. Jung, E. Flach, H.-E. Gumlich, M. Krause, A. Krost, U. Becker, Reflectance Spectroscopy on the Quaternary Semimagnetic Semiconductor CdxZnyMnzTe by Synchrotron Radiation, The Phys. of Semiconductors 2, 1767 (1987), ed. by O. Engströmed, World Scientific Publ. Co., Singapore 1987

1988

/9/ B. Burmester, H.-E. Gumlich, Ch. Jung, A, Krost, H.-U. Middelmann, D. Ricken, R. Weidemann, U. Becker, M. Kupsch, Resonant Photoemission of Zn1-xMnxSe-Thin Films, 19th Int. Conf. on the Physics of Semiconductors, Warsaw 1988

1989

/10/ H. Waldmann, C. Benecke, W. Busse, H.-E. Gumlich, A. Krost, The luminescence of the semimagnetic semiconductor Zn1-xMnxSe, Semicond. Sci. Technol. 4, 71 (1989)

/11/ C. Benecke, W. Busse, H.-E. Gumlich, H. Hoffmann, A. Krost, H. Waldmann, On the Excitation and Emission of the Infrared Luminescence of Wide Band Gap Mn II-VI Semimagnetic Semiconductors, phys. stat. sol. (b)153, 391 (1989)

/12/ H.-E. Gumlich, B. Burmester, Th. Kleemann, Th. Kreitler, A. Krost, H.-U. Middelmann, R. Weidemann, U. Becker, Mn 2p-3d- Anregung in Semimagnetischen Halbleitern des Typs Zn Mn(VI), BESSY Jahresbericht (1989)

1990

/13/ G. Goetz, A. Krost, H.-J. Schulz, Cr2+(d4) Infrared Emission in CdS and CdSe, J. Cryst. Growth 101, 414 (1990)

/14/ R. Weidemann, B. Burmester, H.-E. Gumlich, Ch. Jung, T. Kleemann, Th. Kreitler, A. Krost, H.-U. Middelmann, U. Becker, M. Kupsch, S. Bernstorff, Resonant Photoemission Spectroscopy on ZnMnS: Mn 3p-sd and 2p-3d, J. Cryst. Growth 101, 916 (1990)

/15/ A. Krost, W. Richter, O. Brafman, Microstrain and macrostrain profiles in ZnSe epitaxial layers, Appl. Phys. Lett. 56, 343 (1990)

/16/ T. Wolf, A. Krost, D. Bimberg, H. Schumann, F. Reier, S.I. Fe and Ti-doped InP and InGaAs Grown by LP-MOCVD in: Semi-insulating III-V Materials, Toronto 1990, ed. by C. Miner, p 131 Adam Hilger, Bristol and Philadelphia

/17/ K. Zink, A. Krost, H. Nelkowski, J. Sahm, H. Stutenbecker, Energy Transfer Mechanisms in Zn1-xMnxSe (0.005 < x < 0.017) Detected by ODMR, phys. stat. sol. (b)158, 603 (1990)

/18/ A. Krost, W. Richter, D.R.T. Zahn, K. Hingerl, H. Sitter, Chemical Reaction at the ZnSe/GaAs Interface Detected by Raman Spectroscopy, Appl. Phys. Lett. 57, 1981 (1990)

/19/ K. Hingerl, A. Pesek, A. Krost, D.R.T. Zahn, W. Richter, G. Kudlek, J. Gutowski, Growth and Characterization of ZnSe and ZnTe Grown on GaAs byHot-Wall Epitaxy, Spie 1361, 383 (1990)

/20/ D. Kuhl, F. Hieronymi, E.H. Böttcher, T.Wolf, A. Krost, D. Bimberg, Very High-Speed Metal-Semiconductor-Metal InGaAs:Fe Photodetectors with InP:Fe Barrier Enhancement Layer grown by Metalorganic Chemical Vapour Deposition, Electronics Letters 26, 2107 (1990)

1991

/21/ T. Wolf, A. Krost, D. Bimberg, F. Reier, P. Harde, J. Winterfeld, H. Schumann, Transition metal doping of LP-MOCVD- grown InP, J. Cryst. Growth 107, 381 (1991)

/22/ M. Grundmann, A. Krost, D. Bimberg, LP-MOVPE Growth of Domain Free InP on (001) Si using Low Temperature Processing, J. Cryst. Growth 107, 494 (1991)

/23/ A. Krost, J. Böhrer, M. Grundmann, T. Wolf, D. Bimberg, Atomically abrupt InGaAs/InP quantum well heterointerfaces of macroscopic dimensions grown by LP-MOCVD, EW-MOVPE IV Nijmegen (1991)

/24/ M. Grundmann, A. Krost, D. Bimberg, Antiphase Domain Free InP on Si(001): Optimization of the MOCVD Process, J. Cryst. Growth 115, 150 (1991)

/25/ M. Grundmann, A. Krost, D. Bimberg, Low temperature metal organic chemical vapor deposition of InP on Si (001), Appl. Phys. Lett. 58, 284 (1991)

/26/ A. Krost, W. Richter, D.R.T. Zahn, O. Brafman, Compound Formation and Large Microstrain at the Interface of II-VI/III-V Semiconductors detected by Raman Spectroscopy, Semic. Sci. Techn. 6, A109 (1991)

/27/ O. Brafman, A. Krost, W. Richter, Zone Edge Phonons- A Microprobe of Strain at the Interface of Lattice Mismatched Epitaxial Layers, J.Phys. C3, 6203 (1991)

/28/ M. Grundmann, A. Krost, D. Bimberg, Observation of the first order phase transition from single to double stepped Si (001) in metalorganic chemical vapor deposition of InP on Si, J. Vac. Sci. Technol. B9, 2158 (1991)

1992

/29/ A. Krost, W. Richter, D.R.T. Zahn, Photoexcited Plasmon-LO-Phonon Modes at the ZnSe/GaAs Interface, Appl. Surf. Science 56-58, 691 (1992)

/30/ M. Grundmann, A. Krost, D. Bimberg, Crystallographic and Optical Properties of InP/Si (001) grown by low temperature MOCVD process, Surface Science 267, 47 (1992)

/31/ M. Kolodziejczyk, Th. Filz, A. Krost, W. Richter, D.R.T. Zahn, The Likelihood of III2-VI3 Compound Formation during Epitaxial Growth of II-VI- on III-V- Semiconductors, J. Cryst. Growth 117, 549 (1992)

/32/ N. Esser, A. Krost, M. Kolodziejczyk, U. Resch, W. Richter, J. Wasserfall, D.R.T. Zahn, E. Anastassakis, E. Liarokapis, Y.S. Raptis, Optical Analysis of Thin Semiconductors Layers, 3rd German-Greece Workshop Materials Research for Information Technology, ed by G. Kaiser and N. Constantopoulos,

Forschungszentrum Jülich 1992, p7

/33/ A.C. Wright, J.O. Williams, A. Krost, W. Richter, D.R.T. Zahn, High Resolution and conventional Transmission Electron Microscopy of Ga2Se3 thin films grown by vapour phase epitaxy, J. Cryst. Growth, 121, 111 (1992)

/34/ D.R.T. Zahn, A. Krost, M. Kolodziejczyk, W. Richter, Epitaxial Ga2Se3 Layers Grown on GaAs (100) Using a Heterovalent Exchange Reaction, J. Vac. Sci. Technol. B10, 2077 (1992)

/35/ M. Grundmann, A. Krost, D. Bimberg, InGaAs/InP Quantum Wells on InP/Si(001): Structural and Optical Properties, J. Vac. Sci. Technol. B10, 1840 (1992)

/36/ M. Grundmann, A. Krost, D. Bimberg, O. Ehrmann, H. Cerva, Maskless Growth of InP Stripes on Patterned Si (001): Defect Reduction and Improvement of Optical Properties, Appl. Phys. Lett. 60, 3292 (1992)

/37/ W. Kuhn, A. Naumov, H. Stanzl, S. Bauer, K. Wolf, H.P. Wagner, W. Gebhardt, U.W. Pohl, A. Krost, W. Richter, U. Dümichen, K.H. Thiele, Low temperature MOVPE growth of ZnSe with Ditertiarybutylselenide, J. Cryst. Growth, 123, 605 (1992)

/38/ A. Krost, M.Grundmann, D. Bimberg, H. Cerva, InP on patterned Si (001): Defect Reduction by Application of the Necking Mechanism, J. Cryst. Growth 124, 207 (1992)

/39/ D. Bimberg, T. Wolf, H. Scheffler, N. Baber, A. Knecht, T. Zinke, A. Krost, J. Winterfeld, H. Schumann, Deep Ti-, Zr-, and Hf-related levels in InP: A perspective for the fabrication of new S.I. materials, 7th Conference on Semi-Insulating III-V Materials, Ixtapa, Mexico, April 1992,

/40/ J. Böhrer, A. Krost, D. Bimberg, InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 60, 2258 (1992)

1993

/41/ J. Böhrer, A. Krost, T. Wolf, D. Bimberg, Band Offsets and transitivity of In1-xGaxAs/In1-yAlyAs/InP heterostructures, Phys. Rev. 47, 6439 (1993)

/42/ U. Rossow, A. Krost, T. Werninghaus, K. Schatke, W. Richter, A. Hase, H. Künzel, H. Roehle, Ellipsometric characterisation of InP based quantum well structures, Thin Solid Films 233, 180 (1993)

/43/ A.C. Wright, J.O. Williams, M. von der Emde, D.R.T. Zahn, A. Krost, W. Richter, Transmission Electron Microscopy in the study of the growth of Ga2Se3 thin films by the heterovalent exchange mechanism, Microscopy of Semiconducting Materials VIII, Oxford, 5-8 April 1993

/44/ J. Böhrer, A. Krost, D. Bimberg, Spatially Indirect Intersubband Transitions of Localized Electrons and Holes at the Staggered Line-up In0.52Al0.48As/InP Interface, J. Vac. Sci. Technol. B11, 1642 (1993)

/45/ T. Wolf, T. Zinke, A. Krost, D. Bimberg, Semi-insulating InP codoped with Fe and Ti: An effective means to suppress the interdiffusion of Fe and p-type dopants, Proc. 5th Inter. Conf. InP and Related Materials, Paris, April 1993, ed. by the Institute of Electrical and Electronic Engineers, Inc. 93CH3276-3, p. 707

/46/ R.F. Schnabel, F. Heinrichsdorff, A. Krost, M. Grundmann, T. Wolf, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde, Semi-insulating InP:Fe grown on Si, Proc. 5th Inter. Conf. InP and Related Materials, Paris, April 1993, ed. by the Institute of Electrical and Electronic Engineers, Inc. 93CH3276-3, p. 115

/47/ J. Böhrer, A. Krost, D. Bimberg, Localized electrons and holes at the staggered band line-up interface of InAlAs/InP, Extended abstracts EW-MOVPE V, D5, June 2-4, Malmö, Sweden 1993

/48/ A. Krost, F. Heinrichsdorff, M. Grundmann, F. Schnabel, D. Bimberg, InP grown on Si(111): a new approach for an order of magnitude improvement of layer quality, Extended abstracts EW-MOVPE V, B7, June 2-4, Malmö, Sweden 1993

/49/ A. Krost, J. Böhrer, H. Roehle, Determination of interfacial strain in InP/InGaAs superlattice structures by high resolution x-ray diffraction Extended abstracts EW-MOVPE V, D14, June 2-4, Malmö, Sweden 1993

/50/ J. Böhrer, A. Krost, D. Bimberg, M. Helm, G. Bauer, Two-Dimensional Electron and Hole States at the Staggered Band Line-up Interface of InAlAs/InP, Appl. Phys. Lett. 63, 2955 (1993)

/51/ J. Böhrer, A. Krost, D. Bimberg, Composition Dependence of Band Gap and Type of Line-up in

In1-x-yGaxAlyAs/InP Heterostructures, Appl. Phys. Lett. 63, 1918 (1993)

/52/ R.F. Schnabel, A. Krost, M. Grundmann, F. Heinrichsdorff, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde, Epitaxy of High Resistivity InP on Si, Appl. Phys. Lett. 63, 3607 (1993)

1994

/53/ T.Wolf, T.Zinke, A.Krost, H.Scheffler, H.Ullrich, D.Bimberg, Fe- and Ti-doping of InP grown by metalorganic chemical vapor deposition for the fabrication of thermally stable high-resistivity layers, J. Appl. Phys. 75 (1994), 3870

/54/ A.Krost, F.Heinrichsdorff, R.F.Schnabel, K.Schatke, D.Bimberg, Optical and Crystallographic Properties of High Perfection InP Grown on Si(111), J. Elect. Mat. 23 (1994), 135

/55/ M.von der Emde, D.R.T.Zahn, U.Rossow, G.Kudlek, A.Krost, W.Richter, S.Morley, A.C.Wright, J.O.Williams, Electronic and Structural Properties of  Ga2Se3 Layers on GaAs(100), Formation of Semiconductor Interfaces, ed. by B.Lengeler, H.Lüth, W.Mönch, J.Pollmann (World Scientific, Singapore 1994), 684

/56/ J.Böhrer, A.Krost, D.Bimberg, Spatially Indirect Electronic Transitions at the Staggered Band Line-up InAlAs/InP Interface, Formation of Semiconductor Interfaces, ed. by B.Lengeler, H.Lüth, W.Mönch, J.Pollmann (World Scientific, Singapore 1994), 660

/57/ M.Grundmann, A.Krost, D.Bimberg, The Interaction of interfaces and crystal defects: A case study of InGaAs quantum wells on InP/Si(100), Formation of Semiconductor Interfaces, ed. by B.Lengeler, H.Lüth, W.Mönch, J.Pollmann (World Scientific, Singapore 1994), 531

/58/ A.Krost, J.Böhrer, H.Roehle, G.Bauer, Strain Distribution in InP/InGaAs Superlattice Structure determined by High Resolution X-Ray Diffraction , Appl. Phys. Lett. 64 (1994), 469

/59/ E.Anastassakis, J.Cai, E.Liarokapis, Y.S.Raptis, N.Blick, M.von der Emde, N.Esser, A.Krost, A.Märkl, U.Resch-Esser, W.Richter, U.Rossow, Th.Werninghaus, D.R.T Zahn, Optical analysis of thin semiconducting films, Proc. 4th German Greek Workshop for Materials Research for Information Technology, ed. by G.Kaiser, N.Constantopoulos, Forschungszentrum Jülich 1994, 151

/60/ A.Krost, F.Heinrichsdorff, D.Bimberg, H.Cerva, InP on Si(111): accomodation of lattice mismatch and structural properties, Appl. Phys. Lett. 64 (1994), 769

/61/ D.Bimberg, A.Dadgar, R.Heitz, A.Knecht, A.Krost, M.Kuttler, H.Scheffler,B.Srocka, T.Wolf, T.Zinke, J.Y.Hyeon, S.Wernik, H.Schumann, Novel Ways to Grow Thermally Stable Semiinsulating InP-based Layers, J. Cryst. Growth 145 (1994), 455

/62/ D.Bimberg, J.Böhrer, A.Krost, Large oscillator strength of spatially indirect electron-hole recombination at type II heterojunctions: The InAlAs/InP case, J. Vac. Sci. & Technol. A 12 (1994), 1039

/63/ A.Krost, R.F.Schnabel, F.Heinrichsdorff, U.Rossow, D.Bimberg, H,.Cerva, Defect Reduction in GaAs and InP grown on planar Si(111) and onpatterned Si(001), J. Cryst. Growth 145 (1994), 314

/64/ M.Zorn, J.Jönsen, A.Krost, W.Richter, J.-T.Zettler, K.Ploska, F.Reinhardt, In situ reflectance anisotropy studies of surface structure and reaction dynamics at heterointerfaces, J. Cryst. Growth, 145 (1994), 53

/65/ H.Hillmer, S.Hansmann, H.Burkhard, H.Walter, A.Krost, D.Bimberg, Study of wavelength shift in InGaAs/InAlGaAs QW DFB lasers based on laser parameters from a comparison of experiment and theory, IEEE J. Quant. Electron. 30 (1994), 2251

/66/ J.Böhrer, A.Krost, D.Bimberg, Carrier dynamics in staggered-band lineupn-InAlAs/n-InP heterostructures, Appl. Phys. Lett. 64 (1994), 1992

/67/ E.Dröge, R.F.Schnabel, E.H.Böttcher, M.Grundmann, A.Krost, D.Bimberg, High-speed InGaAs on Si metal semiconductor-metal photodetectors, Electronics Letters 30 (1994), 1348

/68/ Krost, N. Esser, H. Selber, J. Christen, W. Richter, D. Bimberg, L.C. Su, G.B. Stringfellow, Identification of Ordered and Disordered Ga0.51In0.49P Domains by Spatially Resolved Luminescence and Raman Spectroscopy, J. Vac. Sci. and Technol. B12 (1994), 2558

/69/ H. Witte, U. Barthel, B. Garke, Influence of X-ray exposure on electrical properties of a-Si:H, phys. stat. sol. (a) 146 (1994), 703

/70/ M. Grundmann, J. Christen, F. Heinrichsdorff, A. Krost, D. Bimberg, Strain Distribution in InP Grown on Patterned Si: Direct Visualization by Cathodoluminescence Wavelength Imaging, J. Electronic Materials 23 (1994), 201

/71/ R.F.Schnabel, M. Grundmann, A. Krost, J. Christen, F. Heinrichsdorff, D. Bimberg, H. Cerva, Defect Reduction and Strain Relaxation Mechanisms in InP Grown on Patterned Si (001) , Proc. of the 6´th Int. Conf. on InP and Related Materials, Santa Barbare, (1994), 640

/72/ M. Zacharias, B. Garke, H. Freistedt, T. Drüsedau, A. Panckow, Physical properties of amorphous SiOx:Hy-alloys prepared by dc-magnetron sputtering with water vapour as oxygen source, J. Non-Cryst. Solids 169 (1994), 29

/73/ W. Siegel, G. Kühnel, H. Witte, Influence of micro-inhomogeneities on the electron mobility in undoped n-type GaAs, Materials Science Forum Vol. 143-147 (1994), 1565-1570

/74/ A.N. Panckow, H. Witte, T. Oleynik, X-ray detector based on a-Si:H/transition metal bilayer system, phys. stat. sol. (a) 145 (1994), 603

/75/ T.P. Drüsedau, B. Schröder, Optimization of Process Parameters for the Deposition of Improved a-Ge:H by DC-Magnetron Sputtering, J. Appl. Phys. 75 (1994), 2864-2875

/76/ O. Schoenfeld, X. Zhao, T. Hempel, J. Bläsing, Y. Aoyagi, T. Sugano, Formation of nanocrystallites in amorphous silicon thin films, J. Cryst. Growth 142 (1994), 268

/77/ T.P. Drüsedau, A.N. Panckow, Current Fluctuations and Switching Effects in a-Si:H/Molybdenum Multilayer Thin Films, Phil. Mag. Lett. 69 (1994), 333-341

/78/ T. Drüsedau, A. Annen, B. Schröder, H. Freistedt, Vibrational, Optical and Electronic Properties of the Hydrogenated Amorphous Germanium-Carbon Alloy System, Phil. Mag. B 69 (1994), 1-20

/79/ H. Witte, H. Freistedt, J. Bääsing, L. Giesler, Correlation between structural and optical properties of a-Se films, Phys. Stat. Sol. (a) 145 (1994), 363

/80/ M. Zacharias, H. Freistedt, F. Stolze, T.P. Drüsedau, M. Rosenbauer, M. Stutzmann, Properties of sputtered a-SiOx:H alloys with a visible luminescence , J. Non-Cryst. Solid 164-166 (1993)

/81/ O. Schoenfeld, T. Hempel, J. Bläsing, Investigation of the transition from amorphous to microcrystalline silicon, Phys. Stat. Sol. (a) 143 (1994)

/82/ A.N. Panckow, J. Bläsing, T.P. Drüsedau, A Position Detector Based on the lateral Photoeffect in a-Si:H/Metal (Ti, Mo) Multilayers, J. Non-Cryst. Solids 164-166 (1993), 845

/83/ Krost, N. Esser, H. Selber, J. Christen, W. Richter, D. Bimberg, L.C. Su, G.B. Stringfellow, Characterization of Ordered and Disordered Ga0.51In0.49 P Domains by Micro Raman Spectroscopy, J. Cryst. Growth 145 (1994), 171

1995

/84/ H. Cerva, A. Krost, R.F. Schnabel, D. Bimberg: Interface defect structure of

metalorganic chemically vapour deposited InP and GaAs on Si(111),

Phil. Mag. A71, 1145 (1995)

/85/ R.F.Schnabel, M.Grundmann, R.Engelhardt, J.Oertel, A.Krost, D.Bimberg, R.Opitz, M.Schmidbauer, R.Köhler, High quantum efficiency InP-Mesas grown by hybrid epitaxy on Si substrates, J. Cryst. Growth 156 (1995), 337

/86/ R.F.Schnabel, A.Krost, M.Grundmann, D.Bimberg, D.Bimberg, H.Cerva, Maskless selective area growth of InP on sub-µm V-groove patterned Si(001), J. Electron. Mat. 24 (1995), 1625

/87/ R.F.Schnabel, A.Krost, D.Bimberg, H.Cerva, Selective Area Growth of Antiphase Domain Free InP on patterned Si(001), Extended abstracts 6th European Workshop MOVPE C14, Gent, Belgium 1995

/88/ F.Heinrichsdorff, A.Krost, M.Grundmann, J.Böhrer, D.Bimberg, A.Darhuber, G.Bauer, M.Wassermeier, MOCVD Grown InGaAs/GaAs Quantum Dots, Extended abstracts 6th European Workshop MOVPE C17, Gent, Belgium 1995

/89/ A.Krost, G.Bauer, J.Woitok, High Resolution X-Ray Diffraction, Optical Characterisation of Epitaxial Semiconductor Layers, ed. by G.Bauer and W.Richter, Springer-Verlag, Berlin, Heidelberg, New York,  1995, 287-391

/90/ A.Krost, J.Böhrer, A.Dadgar, R.F.Schnabel, D.Bimberg, S.Hansmann, H.Burkhard, High-Resolution X-Ray Analysis of Compressively Strained 1.55 µm GaInAs/AlGaInAs Multi-Quantum Well Structures Near the Critical Thickness, Appl. Phys. Lett. 67 (1995), 3325

/91/ M. Zacharias, J. Bläsing, Preparation of a-GeOx:H alloys: Their Vibrational, Optical and Structural Properties, Phys. Rev. B 52 (1995), 14018

/92/ M. Zacharias, F. Stolze, T. Drüsedau, W. Bock, The preparation of amorphous SixGeyOz alloy films by sputtering: preparation conditions, chemical composition and vibrational properties, phys. stat. sol. (b), 189 (1995), 409

/93/ T. Drüsedau, Electronic Transport through Silicon (a-Si:H) Barriers in Hydrogenated Amorphous Germanium (a-Ge:H), phys. stat. sol. (b) 187 (1995), 117-127

/94/ T. Drüsedau, D. Pang, J. H. Chen and P. Wickboldt: The Effects of Sulfur Incorporation on the Optoelectronic Properties of Hydrogenated Amorphous Germanium,  Phil. Mag. Lett. 71 (1995), 185-192.

/95/ T. Drüsedau, and B. Schröder: Recent Progress in Hydrogenated Amorphous Germanium and its Alloys,  in: Hydrogenated Amorphous Silicon (Solid State Phenomena 44-46), 425-460, Scitec Publications, Zug, Switzerland, 1995

/96/ T. Drüsedau, A. Panckow, and B. Schröder: Investigations of tail and defect states in a-Si0.6Ge0.4:H alloys - implications for the interaction of weak and dangling bonds,  Mat. Res. Soc. Symp. Proc. 377 (1995), 571-576.

/97/ A.Panckow, T. Drüsedau, F. Klabunde, and B. Schröder: Structure and novel electrical properties of a-Si:H based multilayers containing discontinous metal sublayers,  Mat. Res. Soc. Symp. Proc. 382 (1995), 6

1996

/98/ J.Böhrer, A.Krost, R.Heitz, F.Heinrichsdorff, L.Eckey, D.Bimberg, H.Cerva, Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapour deposition, Appl. Phys. Lett. 68 (1996), 1072

/99/ A.Krost, F.Heinrichsdorff, D.Bimberg, A.Darhuber, G.Bauer, High-Resolution X-Ray Diffraction of self-organized InGaAs/GaAs Quantum dot structures, Appl. Phys. Lett. 68 (1996), 785

/100/ M.Kappelt, M.Grundmann, A.Krost, V.Türck, D.Bimberg, InGaAs quantum wires grown by low-pressure metal organic vapor phase epitaxy on InP V-grooves, Appl. Phys. Lett. 68 (1996), 3596

/101/ F.Heinrichsdorff, A.Krost, M.Grundmann, D.Bimberg, A.Kosogov, P.Werner, Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapour deposition, Appl. Phys. Lett. 68 (1996), 3284

/102/ F.Heinrichsdorff, A.Krost, M.Grundmann, D.Bimberg, A.Kosogov, P.Werner, F.Bertram, J.Christen, Kinetically and Thermodynamically induced self organization effects in the growth of quantum dots by MOCVD, Proc. 23rd Int. Conf. Physics Semiconductors, Berlin, July, 1996, ed by M.Scheffler, R.Zimmermann, World Scientific, 1321

/103/ A.A.Darhuber, J.Stangl, V.Holy, G.Bauer, A.Krost, F.Heinrichsdorff, M.Grundmann, D.Bimberg, Structural characterization of single and multiple layers of self assembled InGaAs quantum dots by high resolution x-ray diffraction and reflectivity, Proc. 23rd Int. Conf. Physics Semiconductors, Berlin, July, 1996, ed by M.Scheffler, R.Zimmermann, World Scientific, 1293

/104/ M.Zacharias, J.Bläsing, J.Christen, U.Wendt, Ge Nanocrystals with an Amazingly Sharp Size Distribution - A Detailed Study of the Crystallization of a-Si1-xOxGey Alloy Films , J. Non-Cryst. Solids 198-200 (1996), 919

/105/ M.Zacharias, J.Christen, J.Bläsing, D.Bimberg, Visible luminescence from Ge nanocrystals in a-Si1-x Ox films: correlation of optical properties and size distribution , J. Non-Cryst. Solids 198-200 (1996), 115-118

/106/ M.Zacharias, J.Bläsing, M.Löhmann, J.Christen, Formation of Germanium Nanocrystals in Amorphous GeOx and SiGeOx Alloy Films , Thin Solid Films 278 (1996), 32-36

/107/ H.Freistedt, F.Stolze, M.Zacharias, J.Bläsing, T.P.Drüsedau, The Formation of Germanium-Nanocrystals by Thermal Annealing of a-SiOx:H / a-GeOx:H Multilayers , phys. stat. sol. (b) 193 (1996) 375-389

/108/ T.P.Drüsedau, T.-M.John, R.Anton, J.Bläsing, Thermally Induced Crystallization of Germanium in Sputtered Carbon-Germanium Multilayers , phys. stat. sol. (b) 196 (1996), K1

/109/ T.P.Drüsedau, F.Klabunde, M.Löhmann, J.Bläsing, A novel type of texture in molybdenum thin films , phys. stat. sol. (b) 196 (1996), K21

/110/ T.P.Drüsedau, A.Panckow, F.Klabunde, The hydrogenated amorphous silicon / nanodisperse metal (SIMAL) system - Films of unique electronic properties , J. of Non-Cryst. Solids 198-200 (1996), 829-832

/111/ T.P.Drüsedau, Observation of zero differential resistivity in a-Si:H barriers - on the absence of quantum confinement in amorphous semiconductors for high fields , J. of Non-Cryst. Solids 198-200 (1996), 782-786

/112/ T.P.Drüsedau, P.Wickboldt, J.H.Chen, D.Pang, H.Freistedt, J.Bläsing, W.Bock, Plasma deposited non-stoichiometric hydrogenated germanium sulfide a-Ge1-xSx:H (x < 0.3) , J. of Non-Cryst. Solids 198-200 (1996), 111-114

/113/ F.Klabunde, M.Löhmann, J.Bläsing, T.P.Drüsedau, The influence of argon pressure on the structure of sputtered molybdenum - from pouous amorphous to a new type of highly textured films , J. Appl. Phys. 80 (1996), 6266-6273

1997

/114/ F.Heinrichsdorff, A.Krost, M.Grundmann, D.Bimberg, A.Kosogov, P.Werner, InAs/GaAs quantum dots grown by metal organic chemical vapour deposition, Japanese J. Appl. Physics 36 (1997), 4129

/115/ A.A.Darhuber, V.Holy, J.Stangl, G.Bauer, A.Krost, M.Grundmann, D.Bimberg, V.M.Ustinov,P.S.Kopíev, A.O.Kosogov, P.Werner, High resolution x-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self organized InGaAs quantum dots, Japanese J. Appl. Physics 36  (1997), 4084

/116/ S.Schintke, U.Resch-Esser, N.Esser, A.Krost, W.Richter, B.O.Fimlamd, Surfactant- mediated growth of Indium on GaAs(001), Surface Science 377-379 (1997), 953

/117/ A.A.Darhuber, V.Holy, J.Stangl, G.Bauer, A.Krost, F.Heinrichsdorff, M.Grundmann, D.Bimberg, V.M.Ustinov, P.S.Kopíev, A.O.Kosogov, P.Werner, Lateral and vertical ordering in multilayered self-assembled InGaAs quantum dots studied by high resolutiuon x-ray diffraction, Appl. Phys. Lett. 70 (1997), 955,

/118/ S.Hansmann, K.Dahlhof, B.E.Kempf, R.Göbel, E.Kuphal, B.Hübner, H.Burkhard, A.Krost, K.Schatke, D.Bimberg, Properties of Loss-Coupled Distributed Feedback Laser Arrays for Wavelength Division Multiplexing Systems, J. Lightwave Technol. 15 (1997), 1191

/119/ D.Pahlke, I.Manke, W.Richter, F.Heinrichsdorff, A.Krost, M.Dähne, Photoluminescence scanning nearfield optical microscopy on quantum dots, Fourth Nordic Conference on Surface Science, Surface and Interface Optics 1997, ed. by S.Raaen and J.Bremer, 92

/120/ F.Heinrichsdorff, A.Krost, M.Mao, N.Kirstaedter, A.Kosogov, P.Werner, D.Bimberg, InAs/GaAs quantum dots laser, 8th biennial workshop on Organometallic Vapor Phase Epitaxy, Dana Point, April 1997, USA (late news paper)

/121/ T.Kampschulte, U.Blieske, M.Saad, A.Bauknecht, , J.Albert, M.Kirsch, M.Ch.Lux-Steiner, A.Krost, K.Schatke, Epitaxial growth of n-ZnSe for heterojunction solar cells, Proc. 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, Berlin, June 1997, B7

/122/ F.Heinrichsdorff, M.-H.Mao, N.Kirstaedter, A.Krost, D.Bimberg, A.O.Kosogov, P.Werner, MOCVD grown quantum dot lasers, Proc. 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, Berlin, June 1997, E7

/123/ F.Heinrichsdorff, M.-H.Mao, N.Kirstaedter, A.Krost, D.Bimberg, A.O.Kosogov, P.Werner, Room Temperature QW Lasing from Stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 71 (1997), 22

/124/ A.Strittmatter, A.Krost, F.Heinrichsdorff, K.Schatke, D.Bimberg, J.Bläsing, J.Christen, Epitaxial growth of GaN on Silicon substrates by low-pressure MOCVD using AlAs, AlAs/GaAs and AlN buffer layers, Proc. Int. Conf. on Silicon Carbide, III-nitrides and related materials, August/September 1997, Stockholm, Sweden

/125/ F.Heinrichsdorff, M.Mao, N.Kirstaedter, A.Krost, M.Grundmann, D.Bimberg, Room temperature operation of Al-free InAs/ GaAs quantum dot laser grown by metalorganic chemical vapor deposition, Proc. 9th international conference InP and related materials , Hyannis, May 1997, USA, PD1

/126/ R.Hunger, D.Su, A.Krost, M.Giersing, R.Scheer, H.J.Lewerenz, Composition-dependent growth properties and defect structure of heteroepitaxial CuInS2 films grown by molecular beam epitaxy, Proc. 11th Int. Conf. ternary and multinary compounds, Salford, UK, Sep 1997, Inst.Phys.Conf.Ser. No 152: Section E, 753-756

/127/ A.O.Kosogov, P.Werner, F.Heinrichsdorff, A.Krost, D.Bimberg, 3-D arrays of quantum dots grown by MOCVD, 191st Meeting Electrochem. Soc., Proc. 4th Int. Symposium Quantum Confinemnet: Nanoscale Materials, Devices, and System, May 1997, Montreal, Quebec, Canada

/128/ U.Blieske, T.Kampschulte, A.Bauknecht, M.Saad, J.Söllner, A.Krost, K.Schatke, M.Ch.Lux-Steiner, n-ZnSe/p-GaAs heterojunction solar cells, Proc. 26th IEEE Photovoltaic Specialists Conference, Anaheim, USA, Sept 1997

/129/ I.Manke, D.Pahlke, F.Heinrichsdorff, A.Krost, W.Richter, D.Bimberg, M.Dähne, Photoluminescence of quantum dots imaged spectrally by Scanning Nearfield Optical Microscopy,   Proc. 9th Int. Conf. Scanning Tunneling Microscopy/Spectroscopy and Related Techniques, Hamburg, July 1997, Germany

/130/ M.-H.Mao, F.Heinrichsdorff, N.Kirstaedter, A.Krost, D.Bimberg, Relaxation Oscillation Frequency of Self-Organized Stacked Quantum Lasers at Room Temperature, LEOS 1997

/131/ M.-H.Mao, F.Heinrichsdorff, A.Krost, D.Bimberg, Study of high frequency response of self-organized stacked quantum dot lasers at room temperature, Electronics Letters 33 (1997), 1641

/132/ A.R.Goni, M.Stroh, C.Thomsen, F.Heinrichsdorff, A.Krost, D.Bimberg, Lasing properties of a single, highly strained InAs monolayer in bulk GaAs, Phys. Low-Dim. Structures 11/12 (1997), 27

/133/ A.A.Darhuber, J.Stangl, V.Holy, G.Bauer, A.Krost, M.Grundmann, D.Bimberg, V.M.Ustinov, P.S.Kopíev, A.O.Kosogov, P.Werner, Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques, Thin Solid Films 306 (1997), 198

/134/ M.Topf, D.Meister, I.Dirnstorfer, G.Steude, S.Fischer, B.K.Meyer, A.Krtschil, H.Witte, J.Christen, T.U.Kampen, W.Mönch, Electrical and Optical Properties of p-SiC/n-GaN Heterostructures, Materials Science and Engineering, B50 (1997), 302-306

/135/ A.Strittmatter, A.Krost, M.Strassburg, D.Bimberg, J.Bläsing, J.Christen, Comparison between GaAs, AlAs, and AlN buffer layers for the growth of GaN layers on Silicon substrates, Proc. of 2. Int. Conf. On Nitride Semiconductors, ICNS´97, Tokushima (1997), 324

/136/ T.-M.John, P.Veit, R.Anton, T.P.Drüsedau, Germanium-carbon multilayer films prepared by magnetron sputtering - structure and thermally induced formation of Ge-nanocrystals, Thin Solid Films 296 (1997), 69-71

/137/ F.Heinrichsdorff, A.Krost, M.Grundmann, D.Bimberg, F.Bertram, J.Christen, A.Kosogov, P.Werner, Self Organization Phenomena of InGaAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition, J. of Crystal Growth 170 (1997), 568

/138/ M.Zacharias, R.Weigand, B.Dietrich, J.Bläsing, P.Veit, T.Drüsedau, J.Christen, A comparative study of Ge nanocrystals in SixGeyOz alloys and SiOx/GeOy multilayers, J. Appl. Phys., 81 (1997), 2384

/139/ M.Zacharias, R.Weigand, J.Bläsing, J.Christen, Blue luminescence from Ge nanocrystals containing SiOx films, Mat.Res.Soc.Symp.Proc. Vol. 452 (1997), 117

/140/ T.P.Drüsedau, F.Klabunde, P.Veit, T.Hempel, Investigations on Microstructure, Surface Topography, and Groth Process of Sputtered Molybdenum Showing Texture Turnover, phys. stat. sol. (a) 161 (1997), 167

/141/ T.P.Drüsedau, F.Klabunde, M.Löhmann, T.Hempel, and J.Bläsing: Turnover of texture in low rate sputter-deposited nanocrystalline molybdenum films,  Mat. Res. Soc. Symp. Proc. 472 (1997), 33-38

/142/ T.-M.John, J.Bläsing, P.Veit, and T.P.Drüsedau: Crystallization of germanium-carbon alloys -  structure and electronic transport,  Mat. Res. Soc. Symp. Proc. 467 (1997), 427-432

/143/ A.Diez and T.P.Drüsedau: Bombardment by reflection - a novel method to prepare high quality hydrogenated  amorphous germanium by anodic PCVD,  Mat. Res. Soc. Symp. Proc. 467 (1997), 639-644

1998

/144/ V.Türck, F.Heinrichsdorff, M.Veit, R.Heitz, M.Grundmann,A.Krost, D.Bimberg, Correlation of InGaAs/GaAs Quantum Dot and Wetting Layer Formation, Appl. Surf. Science 123/124 (1998), 352

/145/ F.Heinrichsdorff, A.Krost, D.Bimberg, A.Kosogov, P.Werner, Self Organized Defect Free InAs/GaAs and InAs/InGaAs/GaAs Quantum Dots with High Lateral Density grown by MOCVD, Appl. Surf. Science 123/124 (1998), 725

/146/ A.R.Goni, M.Stroh, C.Thomsen, F.Heinrichsdorff, A.Krost, D.Bimberg, High-gain excitonic lasing from a single InAs monolayer in bulk GaAs, App. Phys. Lett. 72 (1998), 1433

/147/ F.Heinrichsdorff, A.Krost K.Schatke, D.Bimberg, A.O.Kosogov, P.Werner, MOCVD growth and laser applications of In(Ga)As/GaAs Quantum Dots, Light Emitting Devices for optoelectronic applications and the 28th State-of-the art program on compound semiconductors, ed by H.Q.Hou, R.E.Sah, S.J. Pearton, F.Ren, K.Wada, The Electrochemical Society, 1998, 164-187

/148/ R.Schneider, H.Kirmse, W.Neumann, M.Kappelt, F.Heinrichsdorff, A.Krost, D.Bimberg, Characterization of III-V quantum structures by EFTEM, Proc. Int. Conf. on Electron Microscopy, August 98, Mexico

/149/ D.Bimberg, V.A.Shchukin, N.N.Ledentsov, A.Krost, F.Heinrichsdorff, Formation of self-organized quantum dots at semiconductor surfaces, Appl. Surf. Science 130-132 (1998), 713 

/150/ A.R.Goni, M.Stroh, C.Thomsen, F.Heinrichsdorff, V.Türck, A.Krost, D.Bimberg, Lasing and electronic properties of a single InAs monolayer embedded in bulklike GaAs, Proc. 14th SLAFES, Oaxaca, Mexico, January 1998

/151/ M.Grundmann, N.N.Ledentsov, N.Kirstaedter, F.Heinrichsdorff, A.Krost, D.Bimberg, A.O.Kosogov, S.S.Ruvimov, P.Werner, V.M.Ustinov, P.S.Kopíev, Zh.I.Alferov, Semiconductor quantum dots for application in diode lasers, Thin Solid Films 318 (1998), 83

/152/ A.Krost, Properties of Vx-VIy compounds, Landolt Börnstein, III/41C, Non-Tetrahedrally Bonded Elements and Binary Compounds, ed.by O.Madelung, U.Rössler, M.Schulz, Springer 1998, 452

/153/ R.Weigand, M.Zacharias, J.Bläsing, P.Veit, J.Christen, E.Wendler, On the origin of blue light emission from Ge-nanocrystals containing a-SiOx films , Superlattices and Microstructures 23(2) (1998), 349-354

/154/ A.Krtschil, P.Fischer, H.Witte, M.Lisker, J.Christen, S.Einfeldt, U.Birkel, D.Hommel, Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correla- tion with Photoluminescence, Materials Science Forum 264-268 (1998), 1381-1384

/155/ A.Strittmatter, A.Krost, K.Schatke, D.Bimberg, J.Christen, J.Bläsing, Epitaxial growth of GaN on Silicon substrates by low-pressure MOCVD using AlAs, AlAs/GaAs, and AlN buffer layers, Proc. of Int. Conf. Materials Science Forum 264-268 (1998), 1145-1148

/156/ T.P.Drüsedau, M.Löhmann, and B.Garke: Decay length of the pressure dependent deposition rate for magnetron sputtering, J. Vac. Sci. Technol. A16 (4) (1998), 2728-2732

/157/ J.Bläsing, P. Kohlert, M.Zacharias, P. Veit, X-ray fine structure investigation of Ge nanocluster, J. Appl. Cryst. 31(1998), 589-593

/158/ A.Krtschil, H.Witte, M.Lisker, J.Christen, U. Birkle, S.Einfeld, D.Hommel, M.Topf, B.K.Meyer, Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy, Mat.Res.Soc.Symp.Proc. Vol. 482 (1998), 887-892

/159/ A. Krtschil, H. Witte, M. Lisker, J. Christen, U. Birkle, S. Einfeld, D. Hommel, Analysis of deep traps in hexagonal molecurlar beam epitaxy-grown GaN by admittance spectroscopy, J. of. Appl. Phys. 84 (1998) 2040-2043

/160/ M. Zacharias, L. Tsybeskov, K.D. Hirschman, P.M. Fauchet, J. Bläsing, P. Kohlert, P. Veit, Nanocrystalline silicon supterlattices: fabrication and characterization, J. of Non-Crystalline Solids 227-230 (1998), 1132-1136

/161/ F.Heinrichsdorff, A.Krost M.Grundmann, O, Stier, D.Bimberg, A.O.Kosogov, P.Werner, Influence of In segregation and In-Ga intermixing on In(Ga)As quantum dot formation, Journal of Crystal Growth, 195 (1998), 540-545

/162/ T.P.Drüsedau, J.Bläsing, and H.Gnaser: Aluminum mediated low temperature growth of crystalline silicon by PCVD and sputter deposition, Appl. Phys. Lett. 72 (1998), 1510-1512

/163/ H.-M.Latuske and T.P.Drüsedau: Electronic transport by ultrathin molybdenum layers buried in amorphous silicon, Physical Review B 58 (1998), 10933-10941

1999

/164/ A.Krost, F.Heinrichsdorff, D.Bimberg, J.Bläsing, A.A.Darhuber, G.Bauer, X-ray analysis of self-organized InAs/InGaAs quantum dot structure, Crystal Research and Technology, 34 (1999), 89-102

/165/ A.Strittmatter, A.Krost, V.Türck, M.Straßburg, D.Bimberg, J.Bläsing, T.Hempel, J.Christen, B. Neubauer, D. Gerthsen, T. Christman, B.K. Meyer, LP-MOCVD growth of GaN on silicon substrates – comparison between AlAs and ZnO nucleation layers, Materials Science and Engineering B59 (1999), 29-32

/166/ A.Strittmatter, A.Krost, M.Straßburg, V.Türck, D.Bimberg, J.Bläsing, J.Christen, Low-pressure MOCVD growth of GaN layers on Si substrates using an AlAs nucleation layer, Appl. Phys. Lett. 74 (1999), 1242 - 1244

/167/ S.Reich, A.R.Goñi, A.P.Litvinchuk, C.Thomsen, F.Heinrichsdorff, A.Krost, D.Bimberg, Phonons in Highly-Strained InAs/GaAs Thin-Layer Structures, Phys. Rev. B, Rapid Commun.

/168/ H. Witte, A. Krtschil, M. Lisker, J. Christen, M. Topf, D. Meister, B.K. Meyer, Interface and bulk defects in SiC/GaN heterostructures characterized using thermal admittance spectroscopy, Appl. Phys. Lett. 74 (1999), 1424-1426

/169/ A. Krtschil, H. Witte, M. Lisker, J. Christen, U. Birkle, S. Einfeld, D. Hommel, Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: comparison of different nitrogen plasma sources, Appl. Phys. Lett. 74 (1999), 2032-2034

/170/ T. Drüsedau, A. Diez, J. Bläsing, Deposition of nanocrystalline silicon mediated by ultrathin aluminium underlayers by PCVD and sputter-deposition at 500 K, Thin Solid Films 337 (1999), 41-44

/171/ M. Löhmann, F. Klabunde, J. Bläsing, P. Veit, T. Drüsedau, Structural investigations on ultrathin Mo-layers in a-Si:H with emphasis on the island-continous layer transition, Thin Solid Films 342 (1999), 127-135

/172/ T. Drüsedau, T. Bock, T.-M. John, F. Klabunde, W. Eckstein, Energy transfer into the growing film during sputter-deposition: An investigation by calorimetric measurements and Monte-Carlo simulations, J. Vac. Sci. Technol. A 17 (1999), 2896-2905

/173/ H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch, Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots, Appl. Phys. Lett. 75 (1999), 106-108

/174/ J. Christen, A. Krost, D. Rudloff, T. Riemann, M. Lünenbürger, H. Protzmann, M. Heuken, Microscopic characterization of MOCVD-grown InGaN Structures by spatially, spectrally, and time resolved cathodoluminescence, Proc. of EW-MOVPE VIII, Praha, 8.-11. June 1999, W1M8, 33-34, ISBN 80-238-3551-3

/175/ A. Krost, J. Bläsing, F. Heinrichsdorff, D. Bimberg, Direct Evidence of In-enrichment in MOCVD-grown (In,Ga)As/GaAs quantum dots by x-ray diffraction, Proc. of EW-MOVPE VIII, Praha, 8.-11. June 1999, W1A5, 171-174, ISBN 80-238-3551-3

/176/ J. Bläsing, A. Krost, M. Lünenbürger, H. Protzmann, M. Heuken, X-ray analysis of (In,Ga)N structures grown by MOCVD, Proc. of EW-MOVPE VIII, Praha, 8.-11. June 1999, W1M2, 11-14, ISBN 80-238-3551-3

/177/ H. Protzmann, M. Lünenbürger, J. Bläsing, A. Krost, M. Heuken, Properties of GaN-InGaN-multi quantum well structures grown in production type MOCVD systems, Proc. of EW-MOVPE VIII, Praha, 8.-11. June 1999, W2A6, 241-244, ISBN 80-238-3551-3

/178/ T. Riemann, D. Rudloff, J. Christen, A. Krost, M. Lünenbürger, H. Protzmann, M. Heuken, Band filling and energy relaxation in InGaN/GaN-multiple quantum well structures, phys. stat. sol. (b) 216 (1999), 301-305

/179/ D. Rudloff, J. Bläsing, T. Riemann, J. Christen, A. Krost, M. Lünenbürger, H. Protzmann, M. Heuken, Structural and optical analysis of (In,Ga)N structures grown by MOCVD, phys. stat. sol. (b) 216 (1999), 315-320

/180/ A. Krtschil, H. Witte, M. Lisker, J. Christen, A. Krost, U. Birkle, S. Einfeldt, D. Hommel, A. Wenzel, B. Rauschenbach, Incorporation of deep defects in GaN induced by doping and implantation processes, phys. stat. sol. (b) 216 (1999), 587-591

/181/ M. Lisker, A. Krtschil, H. Witte, J. Christen, A. Krost, U. Birkle, S. Einfeldt, D. Hommel, Influence of Carbon doping on the photoconductivity in GaN layers, phys. stat. sol. (b) 216 (1999), 593-597

/182/ A. Strittmatter, A. Krost, J. Bläsing, D. Bimberg, High quality GaN layers grown by metalorganic chemical vapor deposition on Si(111)-Substrates, , phys. stat. sol. (a) 176 (1999), 611-614

/183/ H. Protzmann, M. Lünenbürger, J. Bläsing, A. Krost, M. Heuken, J. Jürgensen, Interface treatment of GaN/InGaN-multi qunatum well structures grown in production type MOVPE systems, phys. stat. sol. (a) 176 (1999), 649-654

/184/ H.Witte, A.Krtschil, M.Lisker,J.Christen F.Scholz, J.Off, Defect states in SiC/GaN- and SiC/GaN/AlGaN-heterostructures characterized by admittance and phtotocurrent spectroscopy,

MRS Internet J. Nitride Semicond. Res. 4S1, G 3.71 (1999) and Mater. Res. Symp. Proc. (1999)

/185/ M.Lisker, A.Krtschil, H.Witte, J.Christen, D.J.As, B.Schöttker, K.Lischka, Electrical and photoelectrical characterization of deep defects in cubic GaN, MRS Internet J. Nitride Semicond. Res. 4S1, G 3.14 (1999) and Mater. Res. Symp. Proc. (1999)

/186/ H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch, The Stoichiometry of InAs Quantum Determined by Cross-Sectional Scanning Tunneling Microscopy, phys. stat. sol. (b) 215, 865 (1999)

/187/ U.W. Pohl, K. Knorr, C. Möller, U. Gernert, W. Richter, J. Bläsing, J. Christen, J. Gottfriedsen, H. Schumann, Low-temperature metalorganic vapor phase epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine", Jpn. J. Appl. Phys. 38 (1999), L105 – L107

/188/ M. Zacharias, J. Bläsing, P. Veit, L. Tsybeskov, K. Hirschman, P.M. Fauchet, Thermal crystallization of amorphous Si/SiO2 superlattices, Appl. Phys. Lett. 74 (1999), 2614-2616

/189/ P. Fischer, A. Krost, J. Christen, M. Zacharias, M. Heuken, Spatially resolved characterization of an InGaN LED test structure by scanning electroluminescence microscopy, 196‘th ECS Meeting, Honolulu, Hawaii, October 10-15, 1999

/190/ A. Krtschil, M. Lisker, H. Witte, J. Christen, U. Birkle, S. Einfeldt, Dr. Hommel, Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy, Materials Science and Engineering B59 (1999), 226-229

/191/ J.L. Spithoven, J. Lorbacher, I. Manke, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch, Finite line width observed in photoluminescence spectra of individual InGaAs quantum dots, J.Vac.Sci.Technol. B, (1999), July

/192/ H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch, Contrast mechanisms in cross-sectional scanning tunnelling microscopy of low-dimensional semiconductor structures, Phys.stat.sol. (b), (1999)

/193/ O. Flebbe, H. Eisele, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch, Atomic structure of stacked InAs quantum dots grown by metal-organic chemical-vapor deposition, J.Vac.Sci.Technol. B, (1999)

/194/ F. Heinrichsdorff, N. Zakharov, P. Werner, A. Krost, D. Bimberg, Electroluminescence of Stacked In(Ga)As/GaAs QDs at 1.3 µm – 1.4 µm, 41st Electronic Materials Conference, Santa Barbara, 1999

/195/ A. Krost, J. Bläsing, M. Lünenbürger, H. Protzmann, M. Heuken, Evaluation of strain and In content in (InGaN/GaN) multiquantum wells by X-ray analysis, Appl. Phys. Lett. 75 (1999), 689-691

/196/ A. Krost, J. Bläsing, F. Heinrichsdorff, D. Bimberg, In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution X-ray diffraction and pole figure analysis, Appl. Phys. Lett. 75 (1999), 2957-2959

/197/ A. Krost, J. Bläsing, Comment on: J.H. Li, H. Chen, L.C. Cai, S.F. Cui, W.X. Yu, J.M. Zhou, Q. Huang, Z. H. Mai, W.L. Zheng, Q.J. Jai, Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray grazing-angle specular reflection, Appl. Phys. Lett. 74 (1999), 2981

/198/ S. Reich, A.R. Goni, C. Thomsen, F. Heinrichsdorff, A. Krost, D. Bimberg, Raman Scattering by Optical Phonons in a Higly Strained InAs/GaAs Monolayer, phys. stat. sol. (b) 215, 419 (1999)

/199/ A. Strittmatter, A. Krost, J. Bläsing, P. Veit, J. Christen, D. Bimberg, Growth and characterization of MOCVD grown GaN layers on Si(111) substrates, MRS Fall Meeting, Boston, November 29 – December 3, 1999

/200/ J. Bläsing, A. Krost, M. Lünenbürger, H. Protzmann, M. Heuken, Investigations of (In,Ga)N/GaN multiquantum well structures by grazing incidence X-ray diffraction and reflectivity techniques, MRS Fall Meeting, Boston, November 29 – December 3, 1999

/201/ A. Dadgar, O. Stenzel, M. Kuttler, A. Krost, D. Bimberg, H. Schumann, Thermally stable, semi-insulating GaAs by Ruthenium doping, MRS Fall Meeting, Boston, November 29 – December 3, 1999

/202/ H. Witte, A. Krtschil, M. Lisker, D. Rudloff, J. Christen, A. Krost, M. Stutzmann, Fermi Level Pinning at GaN-Interfaces: Correlation of electrical admittance and transient spectroscopy, MRS Fall Meeting, Boston, November 29 – December 3, 1999 

2000

/203/ T. Drüsedau, K. Koppenhagen, J. Bläsing, Die Eigenschaften von Aluminiumnitrid hergestellt mittels HF-Magnetronsputtern, DPG-Tagung 2000, Verhandlungen DPG (VI) 35, DS36.3 (2000), 439

/204/ T. Drüsedau, T.-M. John, F. Klabunde, M. Löhmann, H.-M. Latuske, J. Bläsing, Teilchen- und Energieflüsse bei der Sputter –Deposition: Effekte zur Textur und Nanoporosität dünner Schichten, DPG-Tagung 2000, Verhandlungen DPG (VI) 35, DS15.1 (2000), 427

/205/ A. Krtschil, A. Kielburg, M. Lisker, H. Witte, A. Krost, J. Christen, A. Wenzel, B. Rauschenbach, Implantationsinduzierte Generation von Defekten in hexagonalem Galliumnitrid, DPG-Tagung 2000, Verhandlungen DPG (VI) 35, HL27.22 (2000), 549

/206/ A. Krost, J. Bläsing, B. Neubauer, D. Gerthsen, H. Protzmann, M. Lünenbürger, M. Heuken, Phasenseparation und Indium Nanofäden in InGaN/GaN Strukturen, DPG-Tagung 2000, Verhandlungen DPG (VI) 35, HL12.71 (2000), 519

/207/ A. Strittmatter, A. Krost, J. Bläsing, P. Veit, D. Bimberg, Charakterisierung von GaN-Schichten auf Si(111)-Substraten, DPG-Tagung 2000, Verhandlungen DPG (VI) 35, HL 3.11 (2000), 498

/208/ H. Witte, E. Schrenk, M. Lisker, A. Krtschil, J. Christen, A. Krost, F. Scholz, B. Kuhn, Charakterisierung tiefer Störstellen in AlGaN-Schichten, DPG-Tagung 2000, Verhandlungen DPG (VI) 35, HL 27.33 (2000), 551

/209/ F. Schulze, J. Bläsing, A. Krost, O. Schön, A. Alam, M. Heuken, Röntgendiffraktometrie und Reflektometrie an AlGaN/GaN-Multiquantumwell-Strukturen, DPG-Tagung 2000, Verhandlungen DPG (VI) 35, HL 27.37 (2000), 551

/210/ O. Schoen, A. Alam, J. Holst, A. Hoffmann, J. Bläsing, A. Krost, M. Heuken, H. Jürgensen, Uniformity of AlGaN/GaN Laser Structures Grown by MOVPE, J. of Crystal Growth (2000)

/211/ A. Krtschil, A. Kielburg, A. Krost, J, Christen, A. Wenzel, B. Rauschenbach:Electrical Characteritation of Defects in GaN Generated by Ion Implantation, EMRS abstracts 2000, Strasbourg, March 2000

/212/ H. Witte, A. Krtschil, M. Lisker, J. Christen, A, Krost, B. Kuhn, F. Scholz:Detailed Deep Trap Analysis in Mg-Doped p-type GaN Layers grown by MOVPE, EMRS abstracts 2000, Strasbourg, March 2000, Material Science and Engineering B, in print

/213/ F. Schulze, J. Bläsing, A. Krost, O. Schön, A. Alam, and M. Heuken, X-ray diffraction analysis of strains and interface roughness in AlGaN/GaN multi quantum well structures, 3rd Intern. Symposium on Blue Laser and Light Emitting Diodes,

/214/ F. Schulze, J. Bläsing, A. Diez, A. Krost, O. Schön, A. Alam, and M. Heuken, Nearly strain-free AlGaN on (000.1) sapphire: X-ray measurements and a new crystallographic growth model, ICMOVPE-X, Sapporo, Japan, June 2000, J. of Crystal Growth (2000)

/215/ A. Strittmatter, A. Krost, J. Bläsing, P. Veit, and D. Bimberg, Structural investigation on GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer ,( ICMOVPE-X, Sapporo, Japan, June 2000), J. of Crystal Growth (2000)

/216/ A. Krost, J. Bläsing, H. Protzmann, M. Lünenbürger, M. Heuken, Indium nanowires in thick (InGaN) layers as determined by x-ray analysis, App. Phys. Lett. 76 (2000) 1395-1397

/217/ M. Topf, F. Cavas, B.K. Meyer, B. Kempf, A. Krtschil, H. Witte, P. Veit, J. Christen, GaN/SiC heterojunctions grown by LP-CVD, Solid-State Electronics 44 (2000) 271-275

/218/ R. Hunger, D. Su, A. Krost, D. Ellmer, H.J. Lewerenz, R. Scheer, Structure of extended defects in epitaxial CuInS2/Si(111), Thin Solid Films 361-362 (2000), 437-442

/219/ M. Grundmann, A. Krost, Atomic structure based simulation of X-ray scattering from strained superlattices, phys. stat. sol. (b) 218 (2000), 417-423

/220/ A. Krtschil, A. Kielburg, H. Witte, A. Krost, J. Christen, A. Wenzel, B. Rauschenbach, Electrical characterization of ion implantation induced defect states in galliumnitride, Int. Workshop on Nitride Semiconductors (IWN2000), Nagoya, Japan, September 2000, , Jap. J. Appl. Physics, in print

/221/ H. Witte, M. Lisker, A. Krtschil, E. Schrenk, J. Christen, A. Krost, F. Scholz, B. Kuhn, Correlation between deep defects and persistent photoconductivity in undoped GaN and AlGaN layers, Int. Workshop on Nitride Semiconductors (IWN2000), Nagoya, Japan, September 2000, , Jap. J. Appl. Physics, in print

/222/ A. Dadgar, J. Christen, S. Richter, F. Bertram, A. Diez, J. Bläsing, A. Krost, A. Strittmatter, D. Bimberg, A. Alam, M. Heuken, InGaN/GaN blue light emitter grown on Si (111) using an AlAs seed layer, Int. Workshop on Nitride Semiconductors (IWN2000), Nagoya, Japan, September 2000, Jap. J. Appl. Physics, in print

/223/ B. Neubauer, H. Widmann, D. Gerthsen, T. Stephan, H. Kalt, J. Bläsing, P. Veit, A. Krost, O. Schön, M. Heuken, Structural properties, In distribution and photoluminescence of multiple InGaN/GaN quantum well structures, Int. Workshop on Nitride Semiconductors (IWN2000), Nagoya, Japan, September 2000, , Jap. J. Appl. Physics, in print

/224/ A. Dadgar, J. Bläsing, P. Veit, A. Diez, F. Bertram, J. Christen, A. Krost, A. Alam, M. Heuken, Strain relaxation and ordering in GaN/AlGaN multiquantumwells, MRS Fall Meeting, Boston, 2000

/225/ A. Dadgar, S. Richter, J. Bläsing, T. Riemann, A. Diez, P. Veit, J. Christen, A. Krost, A. Alam, M. Heuken, InGaN/GaN blue light emitters on Si, MRS Fall Meeting, Boston, 2000

/226/ A. Dadgar, J. Bläsing, S. Richter, A. Diez, J. Christen, A. Krost, A. Alam, B. Schineller, M. Heuken, H. Jürgensen, Crack free MOCVD growth of GaN/AlGaN and GaN/InGaN MQW electroluminescence test structures (ELT) on (111) silicon substrates, MRS Fall Meeting, Boston, 2000

/227/ A. Krtschil, H. Witte, M. Lisker, J. Christen, A. Krost, U. Birkle, S. Einfeldt, D. Hommel, F. Scholz, J. Off, M. Stutzmann, Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy, Appl. Phys. Lett. 77 (2000), 546 – 548

//228/ A. Dadgar, J. Bläsing, A. Diez, A. Alam, M. Heuken A. Krost, Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si(111) Exceeding 1 µm in Thickness, Jap. J. Appl. Physics 39 (2000), L1183 – L1185

/229/ W. Zhang, H.R. Alves, D.M. Hofmann, J. Bläsing, A. Krost, J. Christen, B.K. Meyer, Effect of Low Growth Rate High Temperature GaN Buffer Layer on the Growth of Thick GaN by Hydride Vapor Phase Epitax, Jap. J. Appl. Physics, in print

 

 

 


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