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Prof. Christen

Prorektor für Haushalt und Planung

Prof. Dr. rer. nat. Jürgen Christen

Fakultät für Naturwissenschaften
Fakultätsverwaltung (FNW)
Gebäude 16, Universitätsplatz 2, 39106, Magdeburg, Gebäude 16, Raum 221
Tel.: +49 391 67 18669
Fax: +49 391 67 11130
Prorektor für Haushalt und Planung

Prof. Dr. rer. nat. Jürgen Christen

Fakultät für Naturwissenschaften
Fakultätsverwaltung (FNW)
Gebäude 16, Universitätsplatz 2, 39106, Magdeburg, Gebäude 16, Raum 221
Tel.: +49 391 67 18669
Fax: +49 391 67 11130
Projekte

Aktuelle Projekte

Abgeschlossene Projekte

Publikationen

2017

Begutachteter Zeitschriftenartikel
Hestroffer, Karine;  Lund, Cory;  Koksaldi, Onur;  Li, Haoran;  Schmidt, Gordon;  Trippel, Max;  Veit, Peter;  Bertram, Frank;  Lu, Ning;  Wang, Qingxiao;  Christen, Jürgen;  Kim, Moon J.;  Mishra, Umesh K.;  Keller, Stacia 

Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 465.2017, S. 55-59; http://dx.doi.org/10.1016/j.jcrysgro.2017.02.037

Gač  ević  , Ž  arko;  Holmes, Mark;  Chernysheva, Ekaterina;  Müller, Marcus;  Torres-Pardo, Almudena;  Veit, Peter;  Bertram, Frank;  Christen, Jürgen;  González Calbet, José María;  Arakawa, Yasuhiko;  Calleja, Enrique;  Lazić  , Snež  ana 

Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar, and polar sections of pencil-Like InGaN/GaN nanowires
In: ACS photonics - Washington, DC: ACS, Bd. 4.2017, 3, S. 657-664; http://dx.doi.org/10.1021/acsphotonics.6b01030

Ma, Dingyu;  Rong, Xin;  Zheng, Xiantong;  Wang, Weiying;  Wang, Ping;  Schulz, Tobias;  Albrecht, Martin;  Metzner, Sebastian;  Müller, Mathias;  August, Olga;  Bertram, Frank;  Christen, Jürgen;  Jin, Peng;  Li, Mo;  Zhang, Jian;  Yang, Xuelin;  Xu, Fujun;  Qin, Zhixin;  Ge, Weikun;  Shen, Bo;  Wang, Xinqiang 

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
In: Scientific reports - [London]: Macmillan Publishers Limited, part of Springer Nature, Vol. 7.2017, Art. 46420, insgesamt 6 S.; http://dx.doi.org/10.1038/srep46420

2016

Begutachteter Zeitschriftenartikel
Schmidt, Gordon;  Veit, Peter;  Berger, Christoph;  Bertram, Frank;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen 

Clustered quantum dots in single GaN islands formed at threading dislocations
In: Japanese journal of applied physics: JJAP - Bristol: IOP Publ, Vol. 55.2016, 5S, Art. 05FF04, insgesamt 5 S.; http://dx.doi.org/10.7567/JJAP.55.05FF04

Wagner, J.;  Wächter, C.;  Wild, J.;  Müller, M.;  Metzner, Sebastian;  Veit, Peter;  Schmidt, Gordon;  Jetter, M.;  Bertram, Frank;  Zweck, J.;  Christen, Jürgen;  Michler, P. 

Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 67-72

Mohajerani, Martin Sadat;  Müller, Marcus;  Hartmann, Jana;  Zhou, Hao;  Wehmann, Hergo-H.;  Veit, Peter;  Bertram, Frank;  Christen, Jürgen;  Waag, Andreas 

Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes
In: Japanese journal of applied physics : JJAP. - Bristol : IOP Publ; Vol. 55.2016, 5S, Art. 05FJ09, insgesamt 5 S.

Metzner, Sebastian;  Bertram, Frank;  Hempel, Thomas;  Meisch, Tobias;  Schwaiger, Stephan;  Scholz, Ferdinand;  Christen, Jürgen 

Direct microscopic correlation of real structure and optical properties of semipolar GaN based on pre-patterned r-plane sapphire
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 54-60

Leute, Robert A. R.;  Heinz, Dominik;  Wang, Yunjun;  Meisch, Tobias;  Müller, Mathias;  Schmidt, Gordon;  Metzner, Sebastian;  Veit, Peter;  Bertram, Frank;  Christen, Jürgen;  Martens, Martin;  Wernicke, Tim;  Kneissl, Michael;  Jenisch, Stefan;  Strehle, Steffen;  Rettig, Oliver;  Thonke, Klaus;  Scholz, Ferdinand 

Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 180-185

Monavarian, Morteza;  Izyumskaya, Natalia;  Müller, Marcus;  Metzner, Sebastian;  Veit, Peter;  Can, Nuri;  Das, Saikat;  Özgür, Ümit;  Bertram, Frank;  Christen, Jürgen;  Morkoç, Hadis;  Avrutin, Vitaly 

Improvement of optical quality of semipolar (1122) GaN on m-plane sapphire by in-situ epitaxial lateral overgrowth
In: Journal of applied physics : AIP\'s archival journal for significant new results in applied physics. - Melville, NY : American Inst. of Physics; Vol. 119.2016, 14, Art. 145303, insgesamt 7 S.

Gač  ević  , Ž  .;  Vukmirović  , N.;  García-Lepetit, N.;  Torres-Pardo, A.;  Müller, M.;  Metzner, Sebastian;  Albert, S.;  Bengoechea-Encabo, A.;  Bertram, Frank;  Veit, Peter;  Christen, Jürgen;  González-Calbet, J. M.;  Calleja, E. 

Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
In: Physical review. - Woodbury, NY : Inst; Vol. 93.2016, 12-15, Art. 125436

Berger, Christoph;  Lesnik, Andreas;  Zettler, Thomas;  Schmidt, Gordon;  Veit, Peter;  Dadgar, Armin;  Bläsing, Jürgen;  Christen, Jürgen;  Strittmatter, André 

Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 440.2016, S. 6-12; http://dx.doi.org/10.1016/j.jcrysgro.2016.01.027

Loitsch, Bernhard;  Müller, Marcus;  Winnerl, Julia;  Veit, Peter;  Rudolph, Daniel;  Abstreiter, Gerhard;  Finley, Janathan J.;  Bertram, Frank;  Christen, Jürgen;  Koblmüller, Gregor 

Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization
In: New journal of physics : the open-access journal for physics. - [Bad Honnef] : Dt. Physikalische Ges, Bd. 18.2016, 6, insges. 11 S.

Schmidt, Gordon;  Veit, Peter;  Wieneke, Matthias;  Bertram, Frank;  Dadgar, Armin;  Krost, Alois;  Christen, Jürgen 

Nanoscale cathodoluminescence of stacking faults and partial dislocations in a-plane GaN
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 73-77

Müller, Marcus;  Schmidt, Gordon;  Metzner, Sebastian;  Veit, Peter;  Bertram, Frank;  Leute, Robert Anton Richard;  Heinz, Dominic;  Wang, Junjun;  Meisch, Tobias;  Scholz, Ferdinand;  Christen, Jürgen 

Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope
In: Physica status solidi / B. - Weinheim : Wiley-VCH, Bd. 253.2016, 1, S. 112-117

Müller, Markus;  Veit, Peter;  Krause, Florian F.;  Schimpke, Tilman;  Metzner, Sebastian;  Bertram, Frank;  Mehrtens, Thorsten;  Müller-Caspary, Knut;  Avramescu, Adrian;  Strassburg, Martin;  Rosenauer, Andreas;  Christen, Jürgen 

Nanoscopic insights into InGaN/GaN core-shell nanorods - structure, composition, and luminescence
In: Nano letters : a journal dedicated to nanoscience and nanotechnology. - Washington, DC : ACS Publ, Bd. 16.2016, 9, S. 5340-5346

Schimpke, Tilman;  Mandl, Martin;  Stoll, Ion;  Pohl-Klein, Bianca;  Bichler, Daniel;  Zwaschka, Franz;  Strube-Knyrim, Johanna;  Huckenbeck, Barbara;  Max, Benjamin;  Müller, Marcus;  Veit, Peter;  Bertram, Frank;  Christen, Jürgen;  Hartmann, Jana;  Waag, Andreas;  Lugauer, Hans-Jürgen;  Strassburg, Martin 

Phosphor-converted white light from blue-emitting InGaN microrod LEDs
In: Physica status solidi / A. - Weinheim : Wiley-VCH, Bd. 213.2016, 6, S. 1577-1584

Neugebauer, Silvio;  Metzner, Sebastian;  Bläsing, Jürgen;  Bertram, Frank;  Dadgar, Armin;  Christen, Jürgen;  Strittmatter, André 

Polarization engineering of c-plane InGaN quantum wells by pulsed-flow growth of AlInGaN barriers
In: Physica status solidi / B - Weinheim: Wiley-VCH, Bd. 253.2016, 1, S. 118-125; http://dx.doi.org/10.1002/pssb.201552448

Müller, Marcus;  Schmidt, Gordon;  Metzner, Sebastian;  Veit, Peter;  Bertram, Frank;  Krylyuk, Sergiy;  Debnath, Ratan;  Ha, Jong-Yoon;  Wen, Baomei;  Blanchard, Paul;  Motayed, Abhishek;  King, Matthew R.;  Davydov, Albert V.;  Christen, Jürgen 

Structural and optical nanoscale analysis of GaN core-shell microrod arrays fabricated by combined top-down and bottom-up process on Si(111)
In: Japanese journal of applied physics : JJAP. - Bristol : IOP Publ; Vol. 55.2016, 5S, Art. 05FF02, insgesamt 6 S.

2015

Artikel in Zeitschrift
Witte, Wolfram;  Abou-Ras, Daniel;  Albe, Karsten;  Bauer, Gottfried H.;  Bertram, Frank;  Boit, Christian;  Brüggemann, Rudolf;  Christen, Jürgen;  Dietrich, Jens;  Eicke, Axel 

Gallium gradients in Cu(In,Ga)Se2 thin-film solar cells
In: Progress in photovoltaics: research and applications - Chichester: Wiley, Bd. 23.2015, 6, S. 717-733; http://dx.doi.org/10.1002/pip.2485 ; [Article first published online: 28 MAR 2014]

Begutachteter Zeitschriftenartikel
Polyakov, A. N.;  Noltemeyer, M.;  Hempel, Thomas;  Christen, Jürgen;  Stepovich, M. A. 

About the practical implementation of same time-of-flight measurements scheme in cathodoluminescence microscopy
In: Prikladnaja fizika : naučno-techničeskij žurnal. - Moskva, 4, S. 16-20, 2015

Chernysheva, E.;  Gač  ević  , Ž  .;  García-Lepetit, N.;  Van Der Meulen, H. P.;  Müller, M.;  Bertram, Frank;  Veit, Peter;  Torres-Pardo, A.;  González Calbet, J. M.;  Christen, Jürgen;  Calleja, E.;  Calleja, J. M.;  Lazić  , S. 

Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays
In: epl : a letters journal exploring the frontiers of physics. - Les Ulis : EDP Sciences, Bd. 111.2015, 2, insges. 7 S.

Hafiz, Shopan;  Zhang, Fan;  Monavarian, Morteza;  Avrutin, Vitaliy;  Morkoç, Hadis;  Özgür, Ümit;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Gil, Bernard 

Determination of carrier diffusion length in GaN
In: Journal of applied physics : AIP\'s archival journal for significant new results in applied physics. - Melville, NY : American Inst. of Physics; Vol. 117.2015, 1, Art. 013106, insgesamt 4 S.

Schmidt, Gordon;  Berger, Christoph;  Veit, Peter;  Metzner, Sebastian;  Bertram, Frank;  Bläsing, Jürgen;  Dadgar, Armin;  Strittmatter, André;  Christen, Jürgen;  Callsen, Gordon;  Kalinowski, Stefan;  Hoffmann, Axel 

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence - a source of single photons in the ultraviolet
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 106.2015, 25, Art. 252101, insgesamt 5 S.; http://dx.doi.org/10.1063/1.4922919

Berger, Christoph;  Dadgar, Armin;  Bläsing, Jürgen;  Lesnik, Andreas;  Veit, Peter;  Schmidt, Gordon;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois;  Strittmatter, André 

Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 414.2015, S. 105-109; http://dx.doi.org/10.1016/j.jcrysgro.2014.09.008

Urban, A.;  Müller, M.;  Karbaum, C.;  Schmidt, Gordon;  Veit, Peter;  Malindretos, J.;  Bertram, Frank;  Christen, Jürgen;  Rizzi, A. 

Optical emission of individual GaN nanocolumns analyzed with high spatial resolution
In: Nano letters : a journal dedicated to nanoscience and nanotechnology. - Washington, DC : ACS Publ, Bd. 15.2015, 8, S. 5105-5109

Kemper, R. M.;  Veit, Peter;  Mietze, C.;  Dempewolf, Anja;  Wecker, T.;  Bertram, Frank;  Christen, Jürgen;  Lindner, J. K. N.;  As, D. J. 

STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells
In: Physica status solidi / C. - Berlin : Wiley-VCH, Bd. 12.2015, 4/5, S. 469-472

Buchbeitrag
Monavarian, Morteza;  Metzner, Sebastian;  Izyumskaya, Natalia;  Müller, Marcus;  Okur, Sserdal;  Zhang, Fan;  Can, Nuri;  Das, Saikat;  Avrutin, Vitaliy;  Özgür, Ümit;  Bertram, Frank;  Christen, Jürgen;  Morkoç, Hadis 

Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiN x interlayers
In: Proceedings of SPIE. - Bellingham, Wash : SPIE, Bd. 9363.2015

Monavarian, Morteza;  Metzner, Sebastian;  Izyumskaya, Natalia;  Okur, Serdal;  Zhang, Fan;  Can, Nuri;  Das, Saikat;  Avrutin, Vitaliy;  Özgür, Ümit;  Bertram, Frank;  Christen, Jürgen;  Morkoç, Hadis 

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes
In: Proceedings of SPIE. - Bellingham, Wash : SPIE, Bd. 9363.2015

Lazić  , Snež  ana;  Chernysheva, Ekaterina;  Gač  ević  , Ž  arko;  García-Lepetit, Noemi;  Meulen, Herko P. van der;  Müller, Marcus;  Bertram, Frank;  Veit, Peter;  Christen, Jürgen;  Torres-Pardo, Almudena;  González Calbet, José M.;  Calleja, Enrique;  Calleja, José M. 

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
In: Proceedings of SPIE. - Bellingham, Wash : SPIE, Bd. 9363.2015

As, D. J.;  Kemper, R.;  Mietze, C.;  Wecker, T.;  Lindner, J. K. N.;  Veit, Peter;  Dempewolf, Anja;  Bertram, Frank;  Christen, Jürgen 

Spatially resolved optical emission of cubic GaN/AIN multi-quantum well structures
In: MRS online proceedings library. - Warrendale, Pa : MRS, Bd. 1736.2015, S. 25-30

Okur, Serdal;  Franke, Alexander;  Zhang, Fan;  Avrutin, Vitaliy;  Morkoç, Hadis;  Bertram, Frank;  Christen, Jürgen;  Özgür, Ümit 

Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates
In: Proceedings of SPIE. - Bellingham, Wash : SPIE, Bd. 9363.2015

2014

Begutachteter Zeitschriftenartikel
Bertram, Frank;  Müller, Marcus;  Schmidt, Gordon;  Veit, Peter;  Christen, Jürgen;  Urban, Arne;  Malindretos, Joerg;  Rizzi, Angela 

Extended defects in GaN nanocolumns characterized by cathodoluminescence directly performed in a transmission electron microscope
In: Turkish journal of physics. - Ankara : Tübitak, 2014

Albert, S.;  Bengoechea-Encabo, A.;  Sabido-Siller, M.;  Müller, Marcus;  Schmidt, Gordon;  Metzner, Sebastian;  Veit, Peter;  Bertram, Frank;  Sánchez-García, M. A.;  Christen, Jürgen;  Calleja, E. 

Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 392.2014, S. 5-10

Koch, Holger;  Bertram, Frank;  Pietzonka, Ines;  Ahl, Jan-Philipp;  Strassburg, Martin;  August, Olga;  Christen, Jürgen;  Kalisch, Holger;  Vescan, Andrei;  Lugauer, Hans-Jürgen 

InGaN - direct correlation of nanoscopic morphology features with optical and structural properties
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 105.2014, 7, Art. 072108, insgesamt 5 S.

Schmidt, Gordon;  Müller, Marcus;  Veit, Peter;  Bertram, Frank;  Christen, Jürgen;  Glauser, Marlene;  Carlin, Jean-François;  Cosendey, Gatien;  Butté, Raphael;  Grandjean, Nicolas 

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 105.2014, 3, Art. 032101, insgesamt 5 S.

Müller, Mathias;  Abou-Ras, Daniel;  Rissom, Thorsten;  Bertram, Frank;  Christen, Jürgen 

Symmetry dependent optoelectronic properties of grain boundaries in polycrystalline Cu(In,Ga)Se 2 thin films
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Bd. 115.2014, 2, Art. 023514, insgesamt 7 S.

Buchbeitrag
Hafiz, Shopan;  Metzner, Sebastian;  Zhang, Fan;  Monavarian, Morteza;  Avrutin, Vitaliy;  Morkoç, Hadis;  Karbaum, Christopher;  Bertram, Frank;  Christen, Jürgen;  Gil, Bernard;  Özgür, Ümit 

Determination of carrier diffusion length in p- and n-type GaN
In: Proceedings of SPIE. - Bellingham, Wash : SPIE; Vol. 8986.2014, Art. 89862C

Okur, S.;  Izyumskaya, N.;  Zhang, F.;  Avrutin, V.;  Metzner, Sebastian;  Karbaum, Christopher;  Bertram, Frank;  Christen, Jürgen;  Morkoç, H.;  Özgür, Ü. 

Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si
In: Proceedings of SPIE. - Bellingham, Wash : SPIE, Bd. 8986/2014

2013

Begutachteter Zeitschriftenartikel
Okur, Serdal;  Shimada, Ryoko;  Zhang, Fan;  Hafiz, Shopan Din Ahmad;  Lee, Jaesoong;  Avrutin, Vitaliy;  Morkoç, Hadis;  Franke, Alexander;  Bertram, Frank;  Christen, Jürgen;  Özgür, Ümit 

GaN-based vertical cavities with all dielectric reflectors by epitaxial lateral overgrowth
In: Japanese journal of applied physics. - Tokyo : Inst. of Pure and Applied Physics; 52.2013, Art. 08JH03, insgesamt 4 S.

Mandl, Martin;  Wang, Xue;  Schimpke, Tilman;  Kölper, Christopher;  Binder, Michael;  Ledig, Johannes;  Waag, Andreas;  Kong, Xiang;  Trampert, Achim;  Bertram, Frank;  Christen, Jürgen;  Barbagini, Francesca;  Calleja, Enrique;  Strassburg, Martin 

Group III nitride coreshell nano- and microrods for optoelectronic applications
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / Rapid research letters, Bd. 7.2013, 10, S. 800-814

Bläsing, Jürgen;  Holý, Vaclav;  Dadgar, Armin;  Veit, Peter;  Christen, Jürgen;  Ploch, Simon;  Frentrup, Martin;  Wernicke, Tim;  Kneissl, Michael;  Krost, Alois 

Growth and characterization of stacking fault reduced GaN(101̄3) on sapphire
In: Journal of physics. - Bristol : IOP PublJournal of physics / D, Bd. 46.2013, 12, insges. 4 S.

Ravash, Roghaiyeh;  Dadgar, Armin;  Bertram, Frank;  Dempewolf, Anja;  Metzner, Sebastian;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois 

MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si(112) and Si(113) substrates
In: Journal of crystal growth. - Amsterdam [u.a.] : Elsevier, Bd. 370.2013, S. 288-292

Okur, S.;  Metzner, Sebastian;  Izyumskaya, N.;  Zhang, F.;  Avrutin, V.;  Karbaum, Christopher;  Bertram, Frank;  Christen, Jürgen;  Morkoç, H.;  Özgür, Ü. 

Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (1101) GaN revealed from spatially resolved luminescence
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, Art.211908, insgesamt 6 S.

Izyumskaya, N.;  Zhang, F.;  Okur, S.;  Selden, T.;  Avrutin, V.;  Özgür, Ü.;  Metzner, Sebastian;  Karbaum, Christopher;  Bertram, Frank;  Christen, Jürgen;  Morkoç, H. 

Optical studies of strain and defect distribution in semipolar (1 1 01) GaN on patterned Si substrates
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Vol. 114.2013, Art. 113502, insgesamt 10 S.

Buchbeitrag
Izyumskaya, N.;  Okur, S.;  Zhang, F.;  Avrutin, V.;  Özgür, Ü.;  Metzner, Sebastian;  Karbaum, Christopher;  Bertram, Frank;  Christen, Jürgen;  Morkoc, H. 

Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates
In: Gallium nitride materials and devices VIII. - Bellingham, Wash. : SPIE, 2013 - (Proceedings of SPIE; 8625)

Leute, R. A. R.;  Meisch, T.;  Wang, J.;  Biskupek, J.;  Kaiser, U.;  Muller, M.;  Veit, Peter;  Bertram, Frank;  Christen, Jürgen;  Scholz, F. 

GaN laser structure with semipolar quantum wells and embedded nanostripes
In: 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). - IEEE, insges. 2 S.

2012

Artikel in Kongressband
Witte, Wolfram;  Powalla, Michael;  Hariskos, D.;  Eicke, A.;  Botros, M.;  Schock, H.-W.;  Abou-Ras, D.;  Mainz, R.;  Rodríguez-Alvarez, H.;  Unold. T.;  Bauer, G. H.;  Brüggemann, R.;  Heise, S. J.;  Neumann, O.;  Meessen, M.;  Christen, Jürgen;  Bertram, Frank;  Müller, Mathias;  Klein, A.;  Adler, T.;  Albe, K.;  Pohl, J.;  Martin, M.;  De Souza, R. A.;  Nagarajan, L.;  Beckers, T.;  Boit, C.;  Dietrich, J.;  Hetterich, M.;  Zhang, Z.;  Scheer, R.;  Kempa, H.;  Orgis, T. 

Chemical gradients in Cu(In,Ga)(S,Se)2 thin-film solar cells - results of the GRACIS project
In: EU PVSEC proceedings. - Munich : WIP-Renewable Energies; 2012, Session 3BO.4.1, S. 2166-2176

Begutachteter Zeitschriftenartikel
Wang, Jiaxing;  Wang, Lai;  Wang, Lei;  Hao, Zhibiao;  Luo, Yi;  Dempewolf, Anja;  Müller, Mathias;  Bertram, Frank;  Christen, Jürgen 

An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of GaN based light-emitting diodes
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Vol. 112.2012, 2, Art. 023107, insgesamt 6 S.

Franke, Alexander;  Bastek, B.;  Sterling, Stefan;  August, Olga;  Petzold, Silke;  Veit, Peter;  Christen, Jürgen;  Moser, P.;  Wieneke, Matthias;  Berger, Christoph;  Bläsing, J.;  Dadgar, Armin;  Krost, Alois 

Optical characterization of a InGaN/GaN microcavity with epitaxial AlInN/GaN bottom DBR
In: MRS online proceedings library. - Warrendale, Pa : MRS, Bd. 1396.2012

Habilitation
Bertram, Frank;  Christen, Jürgen [Gutachter] 

Optische Mikro-Charakterisierung von epitaktisch gewachsenem ZnO und ZnO-basierten Heterostrukturen
In: Magdeburg, Univ., Fak. für Naturwiss., Habil.-Schr., 2012; 75 S.: Ill., graph. Darst.; 21 cm

Originalartikel in begutachteter internationaler Zeitschrift
Ravash, Roghaiyeh;  Veit, Peter;  Müller, Mathias;  Schmidt, Gordon;  Dempewolf, Anja;  Hempel, Thomas;  Bläsing, Jürgen;  Bertram, Frank;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Growth and stacking fault reduction in semi-polar GaN films on planar Si(112) and Si(113)
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 9.2012, 3/4, S. 507-510

Berger, Christoph;  Dadgar, Armin;  Bläsing, Jürgen;  Franke, Alexander;  Hempel, Thomas;  Goldhahn, Rüdiger;  Christen, Jürgen;  Krost, Alois 

Growth of AlInN/AlGaN distributed Bragg reflectors for high quality microcavities
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 9.2012, 5, S. 1253-1258

Scholz, Ferdinand;  Schwaiger, Stephan;  Däubler, Jürgen;  Tischer, Ingo;  Thonke, Klaus;  Neugebauer, Silvio;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Lengner, Holger;  Thalmair, Johannes;  Zweck, Josef 

Semipolar GaInN quantum well structures on large area substrates
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, Bd. 249.2012, 13, S. 464-467

Originalartikel in begutachteter zeitschriftenartiger Reihe
Izyumskaya, N.;  Liu, S. J.;  Avrutin, V.;  Okur, S.;  Zhang, F.;  Özgür, Ü.;  Morkoç, H.;  Metzner, S.;  Karbaum, Christopher;  Bertram, Frank;  Christen, Jürgen;  Smith, D. J. 

Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates
In: Gallium nitride materials and devices VII. - Bellingham, Wash. : SPIE; 2012, Art. 826224 - (Proceedings of SPIE; 8262)

Noltemeyer, Martin;  Bertram, Frank;  Hempel, Thomas;  Bastek, Barbara;  Christen, Jürgen;  Brandt, Matthias;  Lorenz, Michael;  Grundmann, Marius 

Excitonic transport in ZnO
In: Oxide-based materials and devices III. - Bellingham, Wash. : SPIE; 2012, Art. 82630X - (Proceedings of SPIE; 8263)

2011

Anderes Material
Wieneke, Matthias;  Noltemeyer, Martin;  Bastek, Barbara;  Rohrbeck, Antje;  Witte, Hartmut;  Veit, Peter;  Bläsing, Jürgen;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Heavy Si doping - the key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 578-582; http://dx.doi.org/10.1002/pssb.201046372

Originalartikel in begutachteter internationaler Zeitschrift
Dadgar, Armin;  Ravash, Roghaiyeh;  Veit, Peter;  Schmidt, G.;  Müller, Mathias;  Dempewolf, Anja;  Bertram, Frank;  Wieneke, Matthias;  Christen, Jürgen;  Krost, Alois 

Eliminating stacking faults in semi-polar GaN by AlN interlayers
In: Applied physics letters - Melville, NY: AIP, 99.2011, 2, Art. 021905, insgesamt 3 S.; http://dx.doi.org/10.1063/1.3610467

Izyumskaya, N.;  Liu, S. J.;  Avrutin, V.;  Ni, X. F.;  Wu, M.;  Özgür, Ü.;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Zhou, L.;  Smith, David J.;  Morkoça, H. 

Epitaxial lateral overgrowth of non-polar GaN(1 1 ̄0 0) on Si(1 1 2) patterned substrates by MOCVD
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 314.2011, 1, S. 129-135; http://dx.doi.org/10.1016/j.jcrysgro.2010.11.152

Schwaiger, Stephan;  Metzner, Sebastian;  Wunderer, Thomas;  Argut, Ilona;  Thalmair, Johannes;  Lipski, Frank;  Wieneke, Matthias;  Bläsing, Jürgen;  Bertram, Frank;  Zweck, Josef;  Krost, Alois;  Christen, Jürgen;  Scholz, Ferdinand 

Growth and coalescence behavior of semipolar (112̄2) GaN on pre-structured r-plane sapphire substrates
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 588-593; http://dx.doi.org/10.1002/pssb.201046336

Wächter, Clemens;  Meyer, Alexander;  Metzner, Sebastian;  Jetter, Michael;  Bertram, Frank;  Christen, Jürgen;  Michler, Peter 

High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 605-610; http://dx.doi.org/10.1002/pssb.201046369

Ravash, Roghaiyeh;  Bläsing, Jürgen;  Hempel, Thomas;  Noltemeyer, Martin;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 594-599; http://dx.doi.org/10.1002/pssb.201046313

Jönen, Holger;  Rossow, Uwe;  Bremers, Heiko;  Hoffmann, Lars;  Brendel, Moritz;  Dräger, Alexander Daniel;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Schwaiger, Stephan;  Scholz, Ferdinand;  Thalmair, Johannes;  Zweck, Josef;  Hangleiter, Andreas 

Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 600-604; http://dx.doi.org/10.1002/pssb.201046334

Gütay, Levent;  Larsena, Jes K.;  Guillot, Jerome;  Müller, Mathias;  Bertram, Frank;  Christen, Jürgen;  Siebentritt, Susanne 

MOVPE of CuGaSe 2 on GaAs in the presence of a Cu xSe secondary phase
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 315.2011, 1, S. 82-86; http://dx.doi.org/10.1016/j.jcrysgro.2010.09.035

Franke, Alexander;  Bastek, B.;  Krimmling, J.;  Christen, Jürgen;  Moser, Pascal;  Dadgar, Armin;  Krost, Alois 

Optical investigation of a hybrid GaN based microcavity with AlInN/GaN bottom and dielectric top distributed Bragg mirror
In: Superlattices and microstructures: a journal devoted to the science and technology of synthetic microstructures, microdevices, surfaces and interfaces - Oxford [u.a.]: Elsevier Science, Academic Press, Bd. 49.2011, 3, S. 187-192; http://dx.doi.org/10.1016/j.spmi.2010.04.011 ; [Special issue: Proceedings of the 10th International Conference on the Physics of LightMatter Coupling in Nanostructures, PLMCN 2010 (Cuernavaca, Mexico), 12-16 April, 2010]

Metzner, Sebastian;  Bertram, Frank;  Karbaum, Christopher;  Hempel, Thomas;  Wunderer, Thomas;  Schwaiger, Stephan;  Lipski, Frank;  Scholz, Ferdinand;  Wächter, Clemens;  Jetter, Michael;  Michler, Peter;  Christen, Jürgen 

Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (112̄2) and (101̄1) pyramid facets
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 632-637; http://dx.doi.org/10.1002/pssb.201046500

Krost, Alois;  Berger, C.;  Moser, Pascal;  Bläsing, Jürgen;  Dadgar, Armin;  Hums, C.;  Hempel, Thomas;  Bastek, Barbara;  Veit, Peter;  Christen, Jürgen 

StranskiKrastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures
In: Semiconductor science and technology - Bristol: IOP Publ., Bd. 26.2011, 1, insges. 8 S.; http://dx.doi.org/10.1088/0268-1242/26/1/014041

Moser, Pascal;  Bläsing, Jürgen;  Dadgar, Armin;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois 

Stress relaxation in low-strain AlInN/GaN bragg mirrors
In: Japanese journal of applied physics: JJAP - Tokyo: IOP Publ, 50.2011, 3, Art. 031002, insgesamt 6 S.; http://dx.doi.org/10.1143/JJAP.50.031002

Wunderer, T.;  Feneberg, Martin;  Lipski, F.;  Wang, J.;  Leute, R. A. R.;  Schwaiger, S.;  Thonke, K.;  Chuvilin, A.;  Kaiser, U.;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Beirne, G. J.;  Jetter, M.;  Michler, P.;  Schade, L.;  Vierheilig, C.;  Schwarz, U. T.;  Dräger, A. D.;  Hangleiter, A.;  Scholz, F. 

Three-dimensional GaN for semipolar light emitters
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 549-560; http://dx.doi.org/10.1002/pssb.201046352

Originalartikel in begutachteter zeitschriftenartiger Reihe
Dadgar, Armin;  Hempel, Thomas;  Bläsing, Jürgen;  Schulz, O.;  Fritze, Stephanie;  Christen, Jürgen;  Krost, Alois 

Improving GaN-on-silicon properties for GaN device epitaxy
In: Physica status solidi / C: pss - Berlin: Wiley-VCH, Bd. 8.2011, 5, S. 1503-1508; http://dx.doi.org/10.1002/pssc.201001137 ; [Special Issue: 3rd International Symposium on Growth of Group III-Nitrides (ISGN 3) E-MRS 2010 Spring Meeting Symposium G: Physics and Applications of Novel Gain Materials Based on IIIVN Compounds 14th International Conference on High Pressure Semiconductor Physics (HPSP14)]

2010

Originalartikel in begutachteter internationaler Zeitschrift
Bastek, Barbara;  August, Olga;  Hempel, Thomas;  Christen, Jürgen;  Wieneke, Matthias;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois;  Wendt, Ulrich 

Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains
In: Applied physics letters. - Melville, NY : AIP; 96.2010, 17, Art. 172102, insges. 3 S.

Scholz, Ferdinand;  Wunderer, Thomas;  Feneberg, Martin;  Thonke, Klaus;  Chuvilin, Andrei;  Kaiser, Ute;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen 

GaInN-based LED structures on selectively grown semi-polar crystal facets
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, 2010

Lin, Vivian K. X.;  Tripathy, S.;  Teo, S. L.;  Dolmanan, S. B.;  Dadgar, Armin;  Noltemeyer, Martin;  Franke, Alexander;  Bertram, Frank;  Christen, Jürgen;  Krost, Alois 

Luminescence properties of photonic crystal InGaN/GaN light emitting layers on silicon-on-insulator
In: Electrochemical and solid-state letters. - Pennington, NJ : Soc; 13.2010, 10, S. H343-H345

Krost, Alois;  Berger, C.;  Bläsing, Jürgen;  Franke, Alexander;  Hempel, Thomas;  Dadgar, Armin;  Christen, Jürgen 

Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering
In: Applied physics letters. - Melville, NY : AIP, Bd. 97.2010, 18, S. 181105-1-181105-3

Wunderer, Thomas;  Feneberg, Martin;  Lipski, Frank;  Wang, Junjun;  Leute, Robert;  Schwaiger, Stephan;  Thonke, Klaus;  Chuvilin, Andrei;  Kaiser, Ute;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Beirne, Gareth;  Jetter, Michael;  Michler, Peter;  Schade, Lukas;  Vierheilig, Clemens;  Schwarz, Ulrich;  Dräger, Alexander;  Hangleiter, Andreas;  Scholz, Ferdinand 

Three-dimensional GaN for semipolar light emitters
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, insges. 12 S., 2010

Originalartikel in begutachteter zeitschriftenartiger Reihe
Tripathy, S.;  Teo, S. L.;  Lin, V. K. X.;  Chen, M. F.;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Light extraction from GaN-based LED structures on silicon-on-insulator substrates
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 7.2010, 1, S. 88-91

Wunderer, T.;  Wang, J.;  Lipski, F.;  Schwaiger, S.;  Chuvilin, A.;  Kaiser, U.;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Shirokov, S. S.;  Yunovich, A. E.;  Scholz, F. 

Semipolar GaInN/GaN light-emitting diodes grown on honeycomb patterned substrates
In: Physica status solidi. - Berlin : Wiley-VCHPhysica status solidi / C, Bd. 7.2010, 7/8, S. 2140-2143

2009

Originalartikel in begutachteter internationaler Zeitschrift
Hums, Christoph;  Gadanecz, Aniko;  Dadgar, Armin;  Bläsing, Jürgen;  Lorenz, Pierre;  Krischok, Stefan;  Bertram, Frank;  Franke, Alexander;  Schaefer, J. A.;  Christen, Jürgen;  Krost, Alois 

AllnN/GaN based multi quantum well structures - growth and optical proberties
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200880899, 2009

Bastek, Barbara;  Bertram, Frank;  Christen, Jürgen;  Hempel, Thomas;  Dadgar, Armin;  Krost, Alois 

Analysis of point defects in AlN epilayers by cathodoluminescence spectroscopy
In: Applied physics letters . - Melville, NY : AIP, Bd. 95.2009, 3, insges. 3 S.

Mei, Yongfeng;  Thurmer, Dominic J.;  Deneke, Christoph;  Kiravittaya, Suwit;  Chen, Yuan-Fu;  Dadgar, Armin;  Bertram, Frank;  Bastek, Barbara;  Krost, Alois;  Christen, Jürgen;  Reindl, Thomas;  Stoffel, Mathieu;  Coric, Emica;  Schmidt, Oliver G. 

Fabrication, self-assembly, and properties of ultrathin AlN/GaN porous crystalline nanomembranes - tubes, spirals, and curved sheets
In: American Chemical Society : ACS nano . - Washington, DC : ACS, Bd. 3.2009, 7, S. 1663-1668

Saengkaew, Phannee;  Dadgar, Armin;  Bläsing, Jürgen;  Hempel, Thomas;  Veit, Peter;  Christen, Jürgen;  Krost, Alois 

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality Al x Ga 1-x N on Si (111)
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 311.2009, 14, S. 3742-3748

Saengkaew, Phannee;  Dadgar, Armin;  Bläsing, Jürgen;  Bastek, Barbara;  Bertram, Frank;  Reiher, Fabian;  Hums, Christoph;  Noltemeyer, Martin;  Hempel, Thomas;  Veit, Peter;  Christen, Jürgen;  Krost, Alois 

MOVPE growth of high-quality Al 0.1 Ga 0.9 N on Si(111) substrates for UV-LEDs
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200880917, 2009

Ravash, Roghaiyeh;  Bläsing, Jürgen;  Hempel, Thomas;  Noltemeyer, Martin;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates
In: Applied physics letters . - Melville, NY : AIP, Bd. 95.2009a24, insges. 3 S.

Wieneke, Matthias;  Bläsing, Jürgen;  Dadgar, Armin;  Veit, Peter;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Krost, Alois 

Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction
In: Physica status solidi . - Berlin : Wiley-VCH, insges. 4 S.; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200880964, 2009

Originalartikel in begutachteter zeitschriftenartiger Reihe
Mäki, J.-M.;  Tuomisto, F.;  Bastek, Barbara;  Bertam, Frank;  Christen, Jürgen;  Dadgar, Armin;  Krost, Alois 

Effect of growth conditions on vacancy defects in MOVPE grown AlN thin layers
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 11, S. 2575-2577

Tripathy, S.;  Dadgar, Armin;  Zang, K. Y.;  Lin, V. K. X.;  Liu, Y. C.;  Teo, S. L.;  Yong, A. M.;  Soh, C. B.;  Chua, S. J.;  Bläsing, Jürgen;  Christen, Jürgen;  Krost, Alois 

GaN-based deep green light emitting diodes on silicon-on-insulator substrates
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 6.2009, 2, S. 822-825

2008

Originalartikel in begutachteter internationaler Zeitschrift
Bastek, Barbara;  Bertram, Frank;  Christen, Jürgen;  Wernicke, T.;  Weyers, M.;  Kneissl, M. 

A-plane GaN epitaxial lateral overgrowth structures - growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
In: Applied physics letters . - Melville, NY : AIP, Bd. 92.2008, 21, insges. 3 S.

Fernández-Garrido, S.;  Redondo-Cubero, A.;  Gago, R.;  Bertram, Frank;  Christen, Jürgen;  Luna, E.;  Trampert, A.;  Pereiro, J.;  Muoz, E.;  Calleja, E. 

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
In: Journal of applied physics . - Melville, NY : AIP, Bd. 104.2008, 8, S. 083510-1-083510-7

Wu, Z. H.;  Fischer, A. M.;  Ponce, F. A.;  Bastek, Barbara;  Christen, Jürgen;  Wernicke, T.;  Weyers, M.;  Kneisel, M. 

Structural and optical proberties of nonpolar GaN thin films
In: Applied physics letters . - Melville, NY : AIP, Bd. 92.2008, 17, S. 171904-1-171904-3

Fischer, A. M.;  Srinivasan, S.;  Ponce, F. A.;  Monemar, B.;  Bertram, Frank;  Christen, Jürgen 

Time-resolved cathodoluminescence of Mg-doped GaN
In: Applied physics letters . - Melville, NY : AIP, Bd. 93.2008, 15, S. 151901-1-151901-3

Originalartikel in begutachteter zeitschriftenartiger Reihe
Hums, Christopher;  Gadanecz, Aniko;  Dadgar, Armin;  Bläsing, Jürgen;  Witte, Hartmut;  Hempel, Thomas;  Dietz, Annette;  Lorenz, Pierre;  Krischok, Stefan;  Schäfer, Jürgen Alois;  Christen, Jürgen;  Krost, Alois 

MOVPE growth and characterization of AllnN FET structures on Si(1 1 1)
In: Advances in GaN, GaAs, SiC and related alloys on silicon substrates. - Warrendale, Pa. : MRS, insges. 6 S., 2008 - (Materials Research Society symposium proceedings; 1068) ; Kongress: MRS Spring Meeting; (San Francisco, Calif.) : 2008.03.24-28

Schulze, Fabian;  Dadgar, Armin;  Krtschil, André;  Hums, Christoph;  Reißmann, Lars;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

MOVPE growth of blue In xGa 1-x/GaN LEDs on 150 mm Si(001)
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 5.2008, 6, S. 2238-2240

2007

Herausgeberschaft
Christen, Jürgen 

Zinc oxide and related materials - symposium held November 27 - 30, 2006, Boston, Massachusetts, U.S.A. ; [Symposium K, "Zinc Oxide and Related Materials", held ... at the 2006 MRS fall meeting]
In: Warrendale, Pa.: Materials Research Society, 2007; XV, 440 S.: Ill., graph. Darst. - (Materials Research Society symposium proceedings; 957), ISBN 978-1-558-99914-5 ; Kongress: Symposium K: Zinc Oxide and Related Materials; (Boston, Mass.) : 2006.11.27-30 ; MRS fall meeting; (Boston, Mass.) : 2006.11.27-30

Originalartikel in begutachteter internationaler Zeitschrift
Schulze, Fabian;  Dadgar, Armin;  Bertram, Frank;  Bläsing, Jürgen;  Diez, Annette;  Veit, Peter;  Clos, Rainer;  Christen, Jürgen;  Krost, Alois 

Blue light emitting diodes on Si(001) grown by MOVPE
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 4.2007, 1, S. 41-44; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200673534

Bertram, Frank;  Christen, Jürgen;  Dadgar, Armin;  Krost, Alois 

Complex excitonic recombination kinetics in ZnO - capture, relaxation, and recombination from steady state
In: Applied physics letters . - Melville, NY : AIP, Bd. 90.2007, 4, S. 041917, insges. 3 S.

Schulze, Fabian;  Kisel, Olga;  Dadgar, Armin;  Krtschil, André;  Bläsing, Jürgen;  Kunze, M.;  Daumiller, I.;  Hempel, Thomas;  Diez, Annette;  Clos, Rainer;  Christen, Jürgen;  Krost, Alois 

Crystallographic and electric proberties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 299.2007, 2, S. 399-403

Dadgar, Armin;  Schulze, Fabian;  Wienecke, M.;  Gadanecz, A.;  Bläsing, Jürgen;  Veit, Peter;  Hempel, Thomas;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

Epitaxy of GaN on silicon - impact of symmetry and surface reconstruction
In: New journal of physics . - London : IOP Publ., Bd. 9.2007, 10, insges. 10 S.; Abstract unter URL: http://dx.doi.org/10.1088/1367-2630/9/10/389

Hums, Christoph;  Finger, Tilo;  Hempel, Thomas;  Christen, Jürgen;  Dadgar, Armin;  Hoffmann, A.;  Krost, Alois 

Fabry-perot effects in InGaN/GaN heterostructures on Si-substrate
In: Journal of applied physics . - Melville, NY : AIP, Bd. 101.2007, 3, S. 033113, insges. 4 S.

Heinze, Sören;  Krtschil, André;  Bläsing, Jürgen;  Hempel, Thomas;  Veit, Peter;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois 

Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 300.2007, 1, S. 170-175

Neumann, C.;  Lautenschläger, S.;  Graubner, S.;  Sann, J.;  Volbers, N.;  Meyer, B. K.;  Bläsing, Jürgen;  Krost, Alois;  Bertram, Frank;  Christen, Jürgen 

Homoepitaxy of ZnO - from the substrates to doping
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 244.2007, 5, S. 1451-1457

Kim, Dong Sik;  Ji, Ran;  Fan, Jin;  Bertram, Frank;  Scholz, Roland;  Dadgar, Armin;  Nielsch, Kornelius;  Krost, Alois;  Christen, Jürgen;  Gösele, Ulrich;  Zacharias, Margit 

Laser-interface lithography tailored for highly symmetrically arranged ZnO nanowire arrays
In: Small . - Weinheim : Wiley-VCH Verl., Bd. 3.2007, 1, S. 76-80; Abstract unter URL: http://dx.doi.org/10.1002/smll.200600307

Hums, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Diez, Annette;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois;  Lorenz, K.;  Alves, E. 

Metal-organic vapor phase epitaxy and properties of AllnN in the whole compositional range
In: Applied physics letters . - Woodbury, NY : Inst., Bd. 90.2007, S. 022105-1-022105-3; Abstract unter URL: http://dx.doi.org/10.1063/1.2424649

Mofor, A. C.;  Bakin, A. S.;  Elshaer, A.;  Fuhrmann, D.;  Bertram, Frank;  Hangleiter, A.;  Christen, Jürgen;  Waag, A. 

Vapour transport growth of ZnO nanorods
In: Applied physics . - Berlin : Springer, Bd. 88.2007, 1, S. 17-20

Originalartikel in begutachteter zeitschriftenartiger Reihe
Neumann, Christian;  Sann, Joachim;  Lautenschläger, Stefan;  Bertram, Frank;  Christen, Jürgen;  Bläsing, Jürgen;  Krost, Alois;  Meyer, Bruno K. 

Growth and characterization of homoepitaxial ZnO thin films growth by CVD
In: Zinc oxide and related materials. - Warrendale, Pa. : Materials Research Society, insges. 6 S., 2007 - (Materials Research Society symposium proceedings; 957) ; Kongress: MRS fall meeting; (Boston, Mass.) : 2006.11.27-30

Heinze, Sören;  Dadgar, Armin;  Bertram, Frank;  Krtschil, André;  Bläsing, Jürgen;  Witte, Hartmut;  Tiefenau, S.;  Hempel, Thomas;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

Metalorganic vapor phase epitaxy of ZnO - towards p-type conductivity
In: Zinc oxide materials and devices II. - Bellingham, Wash. : SPIE, insges. 15 S., 2007 - (Proceedings of SPIE; 6474)

Lautenschläger, S.;  Neumann, C.;  Graubner, S.;  Sann, J.;  Eylert, F.;  Volbers, N.;  Meyer, B. K.;  Bläsing, Jürgen;  Krost, Alois;  Bertram, Frank;  Christen, Jürgen 

Thin film growth of ZnO and its relation to substrate proberties
In: Zinc oxide materials and devices II. - Bellingham, Wash. : SPIE, insges. 9 S., 2007 - (Proceedings of SPIE; 6474)

2006

Anderes Material
Neubert, B.;  Habel, F.;  Brückner, P.;  Scholz, F.;  Schirra, M.;  Feneberg, M.;  Thonke, K.;  Riemann, Till;  Christen, Jürgen;  Beer, M.;  Zweck, J.;  Moutchnik, G.;  Jetter, M. 

Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 3.2006, 6, S. 1587-1590; Abstract unter URL: http://www3.interscience.wiley.com/cgi-bin/abstract/112622403/ABSTRACT

Originalartikel in begutachteter internationaler Zeitschrift
Mofor, A. C.;  Bakin, A. S.;  Elshaer, A.;  Fuhrmann, D.;  Bertram, Frank;  Hangleiter, A.;  Christen, Jürgen 

Catalyst-free vapor-phase transport growth of vertically aligned ZnO nanorods on 6H-SiC and (11-20)Al-2O-3
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 3.2006, 4, S. 1046-1050; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200564760

Balakrishnan, K.;  Fujimoto, N.;  Kitano, T.;  Bandoh, A.;  Imura, M.;  Nakano, K.;  Iwaya, M.;  Kamiyama, S.;  Amano, H.;  Akasaki, I.;  Takagi, T.;  Noro, T.;  Shimono, K.;  Riemann, Till;  Christen, Jürgen 

Critial aspects of high temperature MOCVD growth of AIN epilayers on 6H-SiC substrates
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 3.2006, 6, S. 1392-1395; Abstract unter URL: http://dx.doi.org/10.1002/pssc.200565387

Bertram, Frank;  Giemsch, Sören;  Forster, D.;  Christen, Jürgen;  Kling, R.;  Kirchner, C.;  Waag, A. 

Direct imaging of phase separation in ZnCdO layers
In: Applied physics letters . - Woodbury, NY : Inst., Bd. 88.2006, 6, S. 061915; Abstract unter URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000088000006061915000001&idtype=cvips&gifs=Yes

Schulze, F.;  Dadgar, Armin;  Bläsing, Jürgen;  Hempel, Thomas;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

Growth of single-domain GaN on Si(0 0 1) by metalorganic vapor-phase epitaxy
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 289.2006, 2, S. 485-488; Abstract unter URL: http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4J32HHD-D&_user=1908389&_handle=V-WA-A-W-CZ-MsSAYZW-UUA-U-AACZUCDYVZ-AACBZBYZVZ-ACZEYYBV-CZ-U&_fmt=summary&_coverDate=04%2F01%2F2006&_rdoc=14&_orig=browse&_srch=%23toc%235302%232006%23997109997%23618635!&_cdi=5302&view=c&_acct=C000052693&_version=1&_urlVersion=0&_userid=1908389&md5=e31b7a130f5b4f153d9f7bdd4ca7e20e

Bakin, A.;  El-Shaer, A.;  Che Mofor, A.;  Kreye, M.;  Waag, A.;  Bertram, Frank;  Christen, Jürgen;  Heuken, M.;  Stoimenos, J. 

MBE growth of ZnO on sapphire employing hydrogen peroxide as an oxidant
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 287.2006, 1, S. 7-11; Abstract unter URL: http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4HVF14T-4&_user=1908389&_handle=V-WA-A-W-VA-MsSWYWW-UUA-U-AACZUCUZBB-AACBZBAVBB-ACCYYCYB-VA-U&_fmt=summary&_coverDate=01%2F18%2F2006&_rdoc=5&_orig=browse&_srch=%23toc%235302%232006%23997129998%23614528!&_cdi=5302&view=c&_acct=C000052693&_version=1&_urlVersion=0&_userid=1908389&md5=c7a885c0bf828f331dfbb215a171b358

Dadgar, Armin;  Veit, Peter;  Schulze, Fabian;  Bläsing, Jürgen;  Krtschil, André;  Witte, Hartmut;  Diez, Annette;  Hempel, Thomas;  Christen, Jürgen;  Clos, Rainer;  Krost, Alois 

MOVPE growth of GaN on Si - substrates and strain
In: Thin solid films . - Amsterdam [u.a.] Elsevier, Bd. 515.2007, 10, S. 4356-4361

Dadgar, Armin;  Krost, Alois;  Christen, Jürgen;  Bastek, Barbara;  Bertram, Frank;  Krtschil, André;  Hempel, Thomas;  Bläsing, Jürgen;  Haboeck, U.;  Hoffmann, A. 

MOVPE growth of high-quality AIN
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 297.2006, 2, S. 306-210; Abstract unter URL: http://han.med.uni-magdeburg.de/han/2776/www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TJ6-4MC71Y0-2&_user=1908396&_handle=C-WA-A-BA-BA-MsSAYVA-UUA-U-U-BA-U-U-AADUEAVYEU-AAZYVECZEU-WUUVBDACY-BA-U&_fmt=summary&_coverDate=12%2F29%2F2006&_rdoc=8&_orig=browse&_srch=%23toc%235302%232006%23997029997%23639777!&_cdi=5302&_acct=C000052693&_version=1&_urlVersion=0&_userid=1908396&md5=b47537f4d69e1731f90dc46ef4ccb325

Bertram, Frank;  Christen, Jürgen 

Microscopic luminescence properties of ZnO and Zno based heterostructures
In: Acta physica Polonica . - Warsaw : Acad. Inst., Bd. 110.2006, 2, S. 103-110; Abstract unter URL: http://przyrbwn.icm.edu.pl/APP/ABSTR/109/a109-6-11.html

Riemann, Till;  Hempel, Thomas;  Christen, Jürgen;  Veit, Peter;  Clos, Rainer;  Dadgar, Armin;  Krost, Alois;  Haboeck, U.;  Hoffmann, A. 

Optical and structural microanalysis of GaN grown on SiN submonolayers
In: Journal of applied physics . - [S.l.], Bd. 99.2006, S. 123518-1-123518-8; Abstract unter URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000099000012123518000001&idtype=cvips&gifs=Yes

Haffouz, S.;  Tang, H.;  Bardwell, J. A.;  Lefebvre, P.;  Bretagnon, T.;  Riemann, Till;  Christen, Jürgen 

Strong potential profile fluctuation and effective localization process in InGaN/GaN multiple quamtum wells grown on {10-1m} faceted surface GaN template
In: Journal of applied physics . - [S.l.], Bd. 100.2006, S. 013528-1-013528-5; Abstract unter URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000100000001013528000001&idtype=cvips&gifs=yes

Marona, L.;  Riemann, Till;  Christen, Jürgen;  ´Swietlik, T.;  Franssen, G.;  Wi´sniewski, P.;  Leszczy´nski, M.;  Prystawko, P.;  Grzegory, I.;  Suski, T.;  Porowski, S.;  Czernecki, R.;  Perlin, P. 

Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals
In: Physica status solidi . - Weinheim : Wiley-VCH, Bd. 203.2006, 7, S. 1778-1782; Abstract unter URL: http://www3.interscience.wiley.com/cgi-bin/abstract/112631973/ABSTRACT

2005

Originalartikel in begutachteter internationaler Zeitschrift
Witte, Hartmut;  Schrenk, E.;  Fluegge, K.;  Krost, Alois;  Christen, Jürgen;  Kuhn, B. (ext.);  Scholz, F. (ext.) 

Characterization of deep defects responsible for the quenching behavior in undoped GaN layers.
In: Physical review, B = condensed matter [Melville, NY] 71(2005), S. 125213-1 - 125213-5

Franssen, G. (ext.);  Grzanka, S. (ext.);  Czernecki, R. (ext.);  Suski, T. (ext.);  Marona, L. (ext.);  Riemann, Till (ext.);  Christen, Jürgen;  Grzegory, I. (ext.);   

Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN/GaN multiple quantum wells on bulk GaN substrates.
In: Journal of applied physics [Melville, NY] 97(2005), S. 103507-1 - 103507-6

Neubert, Barbara (ext.);  Brueckner, Peter (ext.);  Habel, Frank (ext.);  Scholz, Ferdinand (ext.);  Riemann, Till;  Christen, Jürgen;  Beer, Martin (ext.);  Zweck, Joseph (ext.) 

GaInN quantum wells grown on facets of selectively grown GaN stripes.
In: Applied physics letters [Melville, NY] 87(2005), S. 182111-1 - 182111-3

Krost, Alois;  Dadgar, Armin;  Schulze, Fabian;  Blaesing, Juergen;  Strassburger, Gunther;  Clos, Rainer;  Diez, Annette;  Veit, Peter;  Hempel, Thomas;  Christen, Jürgen 

In situ monitoring of the stress evolution in growing group-III-nitride layers.
In: Journal of crystal growth [Amsterdam] 275(2005), S. 209 - 216

Fan, H.J. (ext.);  Scholz, R. (ext.);  Zacharias, M. (ext.);  Goesele, U. (ext.);  Bertram, Frank;  Forster, D. (ext.);  Christen, Jürgen 

Local luminescence of ZnO nanowire-covered surface : a cathodoluminescence microscopy study.
In: Applied physics letters [Melville, NY] 86(2005), Nr. 2, S. 023113-1 - 023113-3

Bertram, Frank;  Forster, D. (ext.);  Christen, Jürgen;  Oleynik, N. (ext.);  Dadgar, Armin;  Krost, Alois 

Microscopic spatial distribution of bound excitons in high-quality ZnO.
In: Materials science forum [Aedermannsdorf] 483/485(2005), S. 1065 - 1068 . - [Silicon carbide and related materials, ECSCRM 2004 (5th European conference Bologna, Italy August 31 - September 4, 2004). - proceedings]

Perez-Solorzano, V. (ext.);  Groening, A. (ext.);  Jetter, M. (ext.);  Riemann, Till;  Christen, Jürgen 

Near-red emission from site-controlled pyramidal InGaN quantum dots.
In: Applied physics letters [Melville, NY] 87(2005), S. 163121-1 - 163121-3

Siebentritt, Susanne (ext.);  Beckers, Inge (ext.);  Riemann, Till;  Christen, Jürgen;  Hoffmann, Axel (ext.);  Dworzak, Matthias (ext.) 

Reconciliation of luminescence and Hall measurements on the ternary semiconductor CuGaSe2.
In: Applied physics letters [Melville, NY] 86(2005), S. 091909-1 - 091909-3

Dadgar, Armin;  Krtschil, Andre;  Bertram, Frank;  Giemsch, Soeren;  Hempel, Thomas;  Veit, Peter;  Diez, Annette;  Oleynik, N. (ext.);  Clos, Rainer;  Christen, Jürgen;  Krost, Alois 

ZnO MOVPE growth : from local impurity incorporation towards p-type doping.
In: Superlattices and microstructures [London] 38(2005), S. 245 - 255

2004

Originalartikel in begutachteter internationaler Zeitschrift
Dadgar, Armin;  Oleynik, Nikolay;  Forster, Daniel;  Deiter, Steffi;  Witek, Helvi;  Blaesing, Juergen;  Bertram, Frank;  Krtschil, Andre;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

A two-step organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001).
In: Journal of crystal growth [Amsterdam] 267(2004), S. 140 - 144

Meyer, B.K. (ext.);  Alves, H. (ext.);  Hofmann, D.M. (ext.);  Kriegseis, W. (ext.);  Forster, Daniel;  Bertram, Frank;  Christen, Jürgen;  Hoffmann, A. (ext.);  Strassburg, M. (ext.);  Dworzak, M. (ext.);  Haboeck, U. (ext.);  Rodina, A.V. (ext.) 

Bound exciton and donor-acceptor pair recombinations in ZnO.
In: Physica status solidi, B = basic research [Berlin] 241(2004), Nr. 2, S. 231 - 260

Bertram, Frank;  Forster, D.;  Christen, Jürgen;  Oleynik, Nikolay;  Dadgar, Armin;  Krost, Alois 

Direct evidence for selective impurity incorporation at the crystal domain boundaries in epitaxial ZnO layers.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 11, S. 1976 - 1978

Krost, Alois;  Dadgar, Armin;  Blaesing, Juergen;  Diez, Annette;  Hempel, Thomas;  Petzold, Silke;  Christen, Jürgen;  Clos, Rainer 

Evolution of stress in GaN heteroepitaxy on AIN/Si(111) : from hydrostatic compressive to biaxial tensile.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 16, S. 3441 - 3443

Bell, A. (ext.);  Christen, Jürgen;  ..., (ext.);   

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGa1-xN layers.
In: Journal of applied physics [New York, NY] 95(2004), Nr. 9, S. 4670 - 4674

Dadgar, Armin;  Oleynik, Nikolay;  Blaesing, Juergen;  Deiter, Steffie (ext.);  Forster, D. (ext.);  Bertram, Frank;  Diez, Annette;  Seip, M. (ext.);  Greiling, A. (ext.);  Christen, Jürgen;  Krost, Alois 

Heteroepitaxy and nitrogen doping of high-quality ZnO.
In: Journal of crystal growth [Amsterdam] 272(2004), S. 800 - 804

Fehse, K.;  Dadgar, Armin;  Krtschil, Andre;  Riemann, Till;  Hempel, Thomas;  Christen, Jürgen;  Krost, Alois 

Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(111).
In: Journal of crystal growth [Amsterdam] 272(2004), S. 251 - 256

Bell, A. (ext.);  Christen, Jürgen;  Bertram, Frank;  Ponce, F.A. (ext.);  Marui, H. (ext.);  Tanaka, S. (ext.) 

Localization versus field effects in single InGaN quantum wells.
In: Applied physics letters [Melville, NY] 84(2004), Nr. 1, S. 58 - 60

Bertram, Frank;  Forster, D. (ext.);  Christen, Jürgen;  Oleynik, Nikolay;  Dadgar, Armin;  Krost, Alois 

Microscopic spatial distribution of bound excitons in high-quality ZnO.
In: Journal of crystal growth [Amsterdam] 272(2004), S. 785 - 788

Fan, H.J. (ext.);  Scholz, R. (ext.);  Kolb, F.M. (ext.);  Zacharias, M. (ext.);  Goesele, U. (ext.);  Heyroth, F. (ext.);  Eisenschmidt, C. (ext.);  Hempel, Thomas;  Christen, Jürgen 

On the growth mechanism and optical properties of ZnO multi-layer nanosheets.
In: Applied physics / a [Berlin [u.a.]] 79(2004), S. 1895 - 1900

Krost, Alois;  Christen, Jürgen;  Oleynik, Nikolay;  Dadgar, Armin;  Deiter, Steffie;  Blaesing, Juergen;  Krtschil, Andre;  Forster, D.;  Bertram, Frank;  Diez, Annette 

Ostwald ripening and flattening of epitaxial ZnO Layers during in situ annealing in metalorganic vapor phase epitaxy.
In: Applied physics letters [Melville, NY] 85(2004), Nr. 9, S. 1496 - 1498

Fan, H.J. (ext.);  Bertram, Frank;  Dadgar, Armin;  Christen, Jürgen;  Krost, Alois;  Zacharias, M. (ext.) 

Self-assembly of ZnO nanowires and the spatial resolved characterization of their luminescence.
In: Nanotechnology [Bristol] 15(2004), S. 1401 - 1404

Riemann, Till;  Christen, Jürgen;  Beaumont, B. (ext.);  Faurie, J.P. (ext.);  Gibart, P. (ext.) 

Self-organized domain formation in low-dislocation-density GaN.
In: Superlattices and microstructures [London] 36(2004), S. 833 - 847

Dadgar, Armin;  Clos, Rainer;  Strassburger, Gunther;  Schulze, F.;  Veit, Peter;  Hempel, Thomas;  Blaesing, Juergen;  Krtschil, Andre;  Daumiller, I. (ext.);  Kunze, M. (ext.);  Kaluza, A. (ext.);  Kamp, M. (ext.);  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

Strains and stresses in GaN heteroepitaxy - sources and control.
In: Advances in solid state physics [Berlin] 44(2004), S. 313 - 325

Witte, Hartmut;  Schrenk, E.;  Fluegge, K.;  Krtschil, Andre;  Lisker, Marco;  Krost, Alois;  Christen, Jürgen;  Kuhn, B. (ext.);  Scholz, F. (ext.) 

Suppressing of optical quenching of deep-to-band transitions in AlGaN and GaN/AlGaN heterostructures.
In: Applied physics letters [Melville, NY] 84(2004), Nr. 18, S. 3498 - 3500

Originalartikel in begutachteter zeitschriftenartiger Reihe
Witte, Hartmut;  Fluegge, K. (ext.);  Dadgar, Armin;  Krtschil, Andre;  Krost, Alois;  Christen, Jürgen 

Deep defects in Fe-doped GaN layers analysed by electrical and photoelectrical spectroscopic methods.
In: Ng, Hock Min (Hrsg.) ; ... (Hrsg): GaN and related alloys : 2003 (Symposium Boston, USA December 1 - 5, 2003). Warrendale, Pa. : Materials Research Society, 2004, S. Y.5.37.1 - Y.5.37.6 (Materials Research Society symposium proceedings 798)

2003

Originalartikel in begutachteter internationaler Zeitschrift
Witte, Hartmut;  Krtschil, Andre;  Lisker, Marco;  Schrenk, E.;  Christen, Jürgen;  Krost, Alois;  Kuhn, B. (ext.);  Scholz, F. (ext.) 

Deep-defect-induced quenching effects in semi-insulating GaN layers detected by photoelectrical spectroscopic techniques.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 23, S. 4083 - 4085

Krestnikov, Igor L. (ext.);  Strassburg, Martin (ext.);  Strittmatter, Andre (ext.);  Ledentsov, Nicolai N. (ext.);  Christen, Jürgen;  Hoffmann, Axel (ext.);  Bimberg, Dieter (ext.) 

Direct evidence of nanoscale carrier localization in InGaN/GaN structures grown on Si substrates.
In: Japanese journal of applied physics : JJAP, Part 2 = Letters [Tokyo] 42(2003), Nr. 9 A/B, S. L1057 - L1060

Krtschil, Andre;  Kielburg, A.;  Witte, Hartmut;  Krost, Alois;  Christen, Jürgen 

Electrical field effect of H-implantation induced defect states in GaN.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 3, S. 403 - 405

Feltin, E. (ext.);  Beaumont, B. (ext.);  Riemann, Till;  Christen, Jürgen;  Dobos, L. (ext.);  Pecz, B. (ext.);   

Epitaxial lateral overgrowth of GaN on Si (111).
In: Journal of applied physics [New York, NY] 93(2003), Nr. 1, S. 182 - 185

Boettcher, T. (ext.);  Christen, Jürgen;  ..., (ext.);   

GaN based laser diodes - epitaxial growth and device fabrication.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1846 - 1859

Dadgar, Armin;  Poschenrieder, Margarethe;  Riemann, Till;  Bertram, Frank;  Blaesing, Juergen;  Schulze, F. (ext.);  Reiher, Antje;  Krtschil, Andre;  Diez, Annette;  Christen, Jürgen;  ..., (ext.);  Krost, Alois;  ;   

Gallium-nitride-based devices on silicon.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1940 - 1949

Dadgar, Armin;  Poschenrieder, Margarethe;  Blaesing, Juergen;  Contreras, O. (ext.);  Bertram, Frank;  Riemann, Till;  Reiher, Antje;  Kunze, M. (ext.);  Daumiller, I. (ext.);  Krtschil, Andre;  Diez, Annette;  Christen, Jürgen;  Krost, Alois;  ;   

MOVPE growth of GaN on Si(111) substrates.
In: Journal of crystal growth [Amsterdam] 248(2003), S. 556 - 562

Oleynik, Nikolay;  Dadgar, Armin;  Blaesing, Juergen;  Adam, Andr;  Krtschil,;  Forster, Daniel;  Bertram, Frank;  Diez, Annette;  Seip, Markus (ext.);  Greiling, Arnd (ext.);  Christen, Jürgen;  Krost, Alois 

Metal organic vapor phase epitaxy of ZnO on GaN/Si(111) using tertiary-Butanol as O-Precursor.
In: Japanese journal of applied physics : JJAP [Tokyo] 42(2003), Nr. 12, S. 7474 - 7477

Oleynik, T.;  Adam, M.;  Krtschil, Andre;  Blaesing, Juergen;  Dadgar, Armin;  Bertram, Frank;  Forster, D.;  Diez, Annette;  Greiling, A. (ext.);  Seip, M. (ext.);  Christen, Jürgen;  Krost, Alois 

Metalorganic chemical vapor phase deposition of ZnO with different O-precursors.
In: Journal of crystal growth [Amsterdam] 248(2003), S. 14 - 19

Dadgar, Armin;  Strittmatter, A. (ext.);  Blaesing, Juergen;  Poschenrieder, Margarethe;  Contreras, O. (ext.);  Veit, Peter;  Riemann, Till;  Bertram, Frank;  Reiher, Antje;  Krtschil, Andre;  Diez, Annette;  Hempel, Thomas;  Finger, T.;  Christen, Jürgen;  Krost, Alois;   

Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1583 - 1606

Heikman, Sten (ext.);  Keller, Stacia (ext.);  Denbaars, Steven P. (ext.);  Mishra, Umesh K. (ext.);  Bertram, Frank;  Christen, Jürgen 

Non-planar selective area growth and characterization of GaN and AlGaN.
In: Japanese journal of applied physics : JJAP [Tokyo] 42(2003), Nr. 10, S. 6276 - 6283

Gruber, Th. (ext.);  Kirchner, C. (ext.);  Kling, R. (ext.);  Reuss, F. (ext.);  Waag, A. (ext.);  Bertram, Frank;  Forster, Daniel;  Christen, Jürgen;  Schreck, M. (ext.) 

Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy.
In: Applied physics letters [Melville, NY] 83(2003), Nr. 16, S. 3290 - 3292

Alves, H. (ext.);  Pfisterer, D. (ext.);  Zeuner, A. (ext.);  Riemann, Till;  Christen, Jürgen;  Hofmann, D.M. (ext.);  Meyer, B.K. (ext.) 

Optical investigations on excitons bound to impurities and dislocations in ZnO.
In: Optical materials [Amsterdam] 23(2003), S. 33 - 37

Christen, Jürgen;  Riemann, Till;  Bertram, Frank;  Rudloff, Dirk 

Optical micro-characterization of group-III-nitrides : correlation of structural, electronic and optical properties.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1795 - 1815

Dadgar, Armin;  Poschenrieder, Margarethe;  Reiher, Antje;  Blaesing, Juergen;  Christen, Jürgen;  Krtschil, Andre;  Finger, T.;  Hempel, Thomas;  Diez, Annette;  Krost, Alois 

Reduction of stress at the initial stages of GaN growth on Si(111).
In: Applied physics letters [Melville, NY] 82(2003), Nr. 1, S. 28 - 30

Rudloff, D. (ext.);  Riemann, Till;  Christen, Jürgen 

Stress analysis of AlxGa1-xN films with microcracks.
In: Applied physics letters [Melville, NY] 82(2003), Nr. 3, S. 367 - 369

Strassburg, M. (ext.);  Christen, Jürgen;  Riemann, Till;  Bertram, Frank;  Fischer, P. (ext.);   

The origin of the PL photoluminescence stokes shift in ternary group-III nitrides : field effects and localization.
In: Physica status solidi, c = conferences [Berlin] 0(2003), Nr. 6, S. 1835 - 1845

Schenk, H.P.D. (ext.);  Vennegues, P. (ext.);  Tottereau, O. (ext.);  Riemann, Till;  Christen, Jürgen 

Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy.
In: Journal of crystal growth [Amsterdam] 258(2003), S. 232 - 250

Bertram, Frank;  Christen, Jürgen;  Heikman, S. (ext.);  Keller, S. (ext.);  Denbaars, S.P. (ext.);  Mishra, U.K. (ext.) 

Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged ba cathodoluminescence microscopy.
In: Physica status solidi, A = applied research [Berlin] 200(2003), Nr. 1, S. 183 - 186

2002

Originalartikel in begutachteter internationaler Zeitschrift
Stassburg, M. (ext.);  Christen, Jürgen;  Dworzak, M. (ext.) 

Analysis of quantum dot formation and exciton localisation in the (Zn, Cd) (S, Se) system.
In: Physica status solidi, A = applied research [Berlin] 229(2002), Nr. 1, S. 529 - 532

Poschenrieder, Margarethe;  Schulze, F.;  Blaesing, Juergen;  Dadgar, Armin;  Diez, Annette;  Christen, Jürgen;  Krost, Alois 

Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum- wells on Si(111) substrates.
In: Applied physics letters [Melville, NY] 81(2002), Nr. 9, S. 1591 - 1593

Dadgar, Armin;  Poschenrieder, Margarethe;  Contreras, O. (ext.);  Christen, Jürgen;  Fehse, K.;  Blaesing, Juergen;  Diez, Annette;  Schulze, F.;  Riemann, Till;  Ponce, F.A. (ext.);  Krost, Alois 

Bright, crack-free InGaN/GaN light emitters on Si(111).
In: Physica status solidi, A = applied research [Berlin] 192(2002), Nr. 2, S. 308 - 313

Haboeck, U. (ext.);  Kaschner, A. (ext.);  Hoffmann, A. (ext.);  Thomsen, C. (ext.);  Riemann, Till;  Krtschil, Andre;  Christen, Jürgen;  Krost, Alois;  Seyboth, M. (ext.);  Habel, F. (ext.) 

Correlation of surface potential, free carrier concentration and light emmission in ELO GaN growth domains.
In: Physica status solidi, B = basic research [Berlin] 234(2002), Nr. 3, S. 911 - 914

Riemann, Till;  Christen, Jürgen;  Kaschner, A. (ext.) 

Direct observation of Ga-rich microdomains in crack-free AIGaN grown on patterned GaN/sapphire substrates.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 17, S. 3093 - 3095

Contreras, O. (ext.);  Ponce, F.A. (ext.);  Christen, Jürgen;  Dadgar, Armin;  Krost, Alois 

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si.
In: Applied physics letters [Melville, NY] 81(2002), Nr. 25, S. 4712 - 4714

Krtschil, Andre;  Kielburg, Andy;  Witte, Hartmut;  Krost, Alois;  Christen, Jürgen;  Wenzel, A. (ext.);  Rauschenbach, B. (ext.) 

Electrical characterization of deep defect states in galliumnitride coimplanted with magnesium and sulfur ions.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 93(2002), S. 85 - 89

Krtschil, Andre;  Kielburg, A.;  Witte, Hartmut;  Christen, Jürgen;  Krost, Alois;  Wenzel, A. (ext.);  Rauschenbach, B. (ext.) 

Electrical characterization of magnesium implanted gallium nitride.
In: Journal of applied physics [New York, NY] 91(2002), Nr. 1, S. 178 - 182

Oleynik, T.;  Dadgar, Armin;  Christen, Jürgen;  Blaesing, Juergen;  Adam, M.;  Riemann, Till;  Diez, Annette;  Krost, Alois;   

Growth of ZnO layers by metal organic chemical vapor phase epitaxy.
In: Physica status solidi, A = applied research [Berlin] 192(2002), Nr. 1, S. 189 - 194

Miyake, H. (ext.);  Takeuchi, R. (ext.);  Hiramatsu, K. (ext.);  Naoi, H. (ext.);  Iyechika, Y. (ext.);  Maeda, T. (ext.);  Riemann, Till;  Bertram, Frank;  Christen, Jürgen 

High quality GaN grown by facet-controlled ELO (FACELO) technique.
In: Physica status solidi, A = applied research [Berlin] 194(2002), Nr. 2, S. 545 - 549

Wagner, V. (ext.);  Riemann, Till;  Christen, Jürgen;   

Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy.
In: Journal of applied physics [New York, NY] 92(2002), Nr. 3, S. 1307 - 1316

Strassburg, M. (ext.);  Christen, Jürgen;   

Lateral redistribution of excitons in cdSe/ZnSe quantum dots.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 3, S. 473 - 475

Riemann, Till;  Christen, Jürgen 

Microscopic analysis of high quality thick ZnO CVD layers : imaging of growth domains, strain relaxation, and impurity incorporation.
In: Physica status solidi, B = basic research [Berlin] 229(2002), Nr. 2, S. 891 - 895

Bertram, Frank;  Srinivasan, S. (ext.);  Geng, L. (ext.);  Ponce, F.A. (ext.);  Riemann, Till;  Christen, Jürgen 

Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 19, S. 3524 - 3526

Gradecak, S. (ext.);  Wagner, V. (ext.);  Ilegems, M. (ext.);  Riemann, Till;  Christen, Jürgen;  Stadelmann, P. (ext.) 

Microscopic evidence of point defect incorporation in laterally overgrown GaN.
In: Applied physics letters [Melville, NY] 80(2002), Nr. 16, S. 2866 - 2868

Zhang, W. (ext.);  Riemann, Till;  Alves, H.R. (ext.);  Heuken, M. (ext.);  Meister, D. (ext.);  Kriegseis, W. (ext.);  Hofmann, D.M. (ext.);  Christen, Jürgen;  Krost, Alois;  Meyer, B.K. (ext.) 

Modulated growth of thick GaN with hydride vapor phase epitaxy.
In: Journal of crystal growth [Amsterdam] 234(2002), S. 616 - 622

Strassburg, M. (ext.);  Dworzak, M. (ext.);  Heitz, R. (ext.);  Hoffmann, A. (ext.);  Christen, Jürgen;  Schikora, D. (ext.) 

Redistribution of localised excitons in CdSe/ZnSe quantum dot structures.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 88(2002), S. 302 - 306

Bertram, Frank;  Srinivasan, S. (ext.);  Liu, R. (ext.);  Geng, L. (ext.);  Ponce, F.A. (ext.);  Riemann, Till;  Christen, Jürgen;  Tanaka, S. (ext.);  Omiya, H. (ext.);  Nakagawa, Y. (ext.) 

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 93(2002), S. 19 - 23

Einfeldt, S. (ext.);  Diesselberg, M. (ext.);  Heinke, H. (ext.);  Hommel, D. (ext.);  Rudloff, Dirk;  Christen, Jürgen;  Davis, R.F. (ext.) 

Strain in cracked AlGaN layers.
In: Journal of applied physics [New York, NY] 92(2002), Nr. 1, S. 118 - 123

Originalartikel in begutachteter zeitschriftenartiger Reihe
Dadgar, Armin;  Poschenrieder, Margarethe;  Blaesing, Juergen;  Contreras, O. (ext.);  Bertram, Frank;  Riemann, Till;  Reiher, Antje;  Kunze, M. (ext.);  Daumiller, I. (ext.);  Krtschil, Andre;  Diez, Annette;  Kaluza, A. (ext.);  Christen, Jürgen;  Ponce, F.A. (ext.);  Kohn, E. (ext.);  Krost, Alois;   

Bright future for GaN-ON-silicon.
In: Chang, P. C. (Hrsg.) ; Buckley, D. N. (Hrsg.) ; ... (Hrsg.): Compound semiconductors XXXVII (SOTAPOCS XXXVII) and Narrow bandgap optoelectronic materials and devices (held at the 202nd meeting of the Electrochemical Society Salt Lake City, October 20-25, 2002). - state-of-the-art-programme. Pennington, NJ : Electrochemical Society, 2002, S. 300 - 310 (Proceedings volume // Electrochemical Society 2002-14)

2001

Originalartikel in begutachteter internationaler Zeitschrift
Hoffmann, Lars (ext.);  Rudloff, Dirk;  Rechenberg, Ingrid (ext.);  Knauer, Arne (ext.);  Christen, Jürgen;  Weyers, Markus (ext.) 

(AlGa)As composition profile analysis of trenches overgrown with MOVPE.
In: Journal of crystal growth [Amsterdam] 222(2001), S. 465 - 470

Dadgar, Armin;  Christen, Jürgen;  Riemann, Till;  Richter, Steffen;  Blaesing, Juergen;  Diez, Annette;  Krost, Alois;  Alam, A. (ext.);  Heuken, M. (ext.) 

Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111) : impact of an AlGaN/GaN multilayer.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 15, S. 2211 - 2213

Dadgar, Armin;  Alam, A. (ext.);  Riemann, Till;  Blaesing, Juergen;  Diez, Annette;  Poschenrieder, Margarethe;  Strassburg, M. (ext.);  Heuken, M. (ext.);  Christen, Jürgen;  Krost, Alois 

Crack-free InGaN/GaN light emitters on Si(111).
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 1, S. 155 - 158

Witte, Hartmut;  Krtschil, Andre;  Lisker, Marco;  Krost, Alois;  Christen, Jürgen;  Kuhn, B. (ext.);  Scholz, F. (ext.) 

Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE.
In: Materials science & engineering, B = Solid state materials for advanced technology [Amsterdam] 82(2001), S. 85 - 87

Zhang, W. (ext.);  Riemann, Till;  Veit, Peter;  Blaesing, Juergen;  Krost, Alois;  Christen, Jürgen;   

Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 6, S. 772 - 774

Zhang, W. (ext.);  Alves, H.R. (ext.);  Blaesing, Juergen;  Riemann, Till;  Heuken, M. (ext.);  Veit, Peter;  Pfisterer, D. (ext.);  Gregor, R. (ext.);  Hofmann, D.M. (ext.);  Krost, Alois;  Christen, Jürgen;  Meyer, B.K. (ext.) 

Effects of substrate pretreatment and buffer layers on GaN epilayers grown by hybride vapor phase epitaxy.
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 1, S. 425 - 428

Feltin, E. (ext.);  Beaumont, B. (ext.);  Vennegues, P. (ext.);  Riemann, Till;  Christen, Jürgen;  Faurie, J.P. (ext.);  Gibart, P. (ext.) 

Epitaxial lateral overgrowth of GaN on Silicon (111).
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 2, S. 733 - 737

Zhang, W. (ext.);  Riemann, Till;  Alves, H.R. (ext.);  Heuken, M. (ext.);  Veit, Peter;  Pfisterer, D. (ext.);  Hofmann, D.M. (ext.);  Blaesing, Juergen;  Krost, Alois;  Christen, Jürgen;  Meyer, B.K. (ext.) 

Flow modulation growth of thick GaN by hybride vapor phase epitaxy.
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 1, S. 453 - 456

Krtschil, Andre;  Kielburg, A.;  Witte, Hartmut;  Krost, Alois;  Christen, Jürgen;  Wenzel, A. (ext.);  Rauschenbach, B. (ext.) 

Implantation induced defect states in Gallium Nitride and their annealing behaviour.
In: Physica status solidi, B = basic research [Berlin] 228(2001), Nr. 1, S. 325 - 329

Zhang, Wei (ext.);  Alves, Helder R. (ext.);  Riemann, Till;  Heuken, M. (ext.);  Veit, Peter;  Meister, Dirk (ext.);  Kriegseis, Wilhelm (ext.);  Hofmann, Detlev M. (ext.);  Christen, Jürgen;  Meyer, Bruno K. (ext.) 

Investigation of structural defects of thick GaN grown by flow-modulated hydride vapor-phase epitaxy.
In: Physica, B = condensed matter [Amsterdam] 308/310(2001), S. 89 - 92

Strittmatter, A. (ext.);  Riemann, Till;  Christen, Jürgen;  Krost, Alois;   

Maskless epitaxial lateral overgrowth of GaN layers on structures Si(111) substrates.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 6, 727 - 729

Ota, Takeshi (ext.);  Maehashi, Kenzo (ext.);  Christen, Jürgen 

Micro-photoluminescence spectroscopy of single (Al, Ga)As quantum wires grown on vicinal GaAs (110) surfaces.
In: Physica, E = low-dimensional systems & nanostructures [Amsterdam] 11(2001), Nr. 2/3, S. 228 - 232

Christen, Jürgen;  Riemann, Till 

Optical micro-characterization of complex GaN structures.
In: Physica status solidi, B = basic research [Berlin] 228(2001), Nr. 2, S. 419 - 424

Bertram, Frank;  Srinivasan, S. (ext.);  Ponce, F.A. (ext.);  Riemann, Till;  Christen, Jürgen;  Molnar, R.J. (ext.) 

Spatial variation of luminescence in thick GaN films.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 9, S. 1222 - 1224

Bertram, Frank;  Srinivasan, S. (ext.);  Geng, L. (ext.);  Ponce, F.A. (ext.);  Riemann, Till;  Christen, Jürgen;  Tanaka, S. (ext.);  Omiya, H. (ext.);  Nakagawa, Y. (ext.) 

Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning catholuminescence.
In: Physica status solidi, B = basic research [Berlin] 228(2001), Nr. 1, S. 35 - 39

Kruse, C. (ext.);  Einfeldt, S. (ext.);  Boetcher, T. (ext.);  Hommel, D. (ext.);  Rudloff, Dirk;  Christen, Jürgen 

Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy.
In: Applied physics letters [Melville, NY] 78(2001), Nr. 24, S. 3827 - 3829

Hilpert, U (ext.);  Worschech, L. (ext.);  Rudloff, Dirk;  Schreiber, J. (ext.);  Ossau, W. (ext.);  Christen, Jürgen 

Spectroscopy of individual dislocation bundles in thin ZnSe films.
In: Physica status solidi, A = applied research [Berlin] 186(2001), Nr. 1, S. R10 - R12

Riemann, Till;  Christen, Jürgen;  Kaschner, A. (ext.);  Hoffmann, A. (ext.);  Thomsen, C (ext.);  Seyboth, M. (ext.);  Habel, F. (ext.);  Beccard, R. (ext.);  Heuken, M. (ext.) 

Three-dimensional imaging of ELOG growth domains by scanning cathodoluminescence tomography.
In: Physica status solidi, A = applied research [Berlin] 188(2001), Nr. 2, S. 751 - 755

2000

Buchbeitrag
Riemann, Till;  Christen, Jürgen;  Kaschner, A. (ext.) 

Cathodoluminescence microscopy and micro-Raman spectroscopy of growth domains formed during epitaxial lateral overgrowth of GaN.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 280 - 283 (IPAP conference series 1)

Witte, Hartmut;  Lisker, Marco;  Krtschil, Andre;  Schrenk, E.;  Christen, Jürgen;  Krost, Alois;  Scholz, F. (ext.);  Kuhn, B. (ext.) 

Correlation between deep defects and persistent photoconductivity in undoped GaN and AlGaN layers.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 467 - 470 (IPAP conference series 1)

Krtschil, Andre;  Kielburg, A.;  Witte, Hartmut;  Krost, Alois;  Christen, Jürgen;  Wenzel, A. (ext.);  Rauschenbach, B. (ext.) 

Electrical characterization of ion implantation induced defect states in gallium nitride.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 625 - 628 (IPAP conference series 1)

Dadgar, Armin;  Christen, Jürgen;  Richter, Steffen;  Bertram, Frank;  Diez, Annette;  Krost, Alois;  Strittmatter, A. (ext.) 

InGaN/GaN blue light emitter grown on Si(111) using an AlAs seed layer.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 845 - 848 (IPAP conference series 1)

Zhang, W. (ext.);  Roesel, S. (ext.);  Veit, Peter;  Riemann, Till;  Christen, Jürgen;  Meyer, B.K. (ext.);   

Time-modulated growth of thick GaN by hydride vapor phase epitaxy : suppression of dislocations.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 27 - 29 (IPAP conference series 1)

Rudloff, Dirk;  Riemann, Till;  Christen, Jürgen;  Vogeler, K. (ext.) 

}... Spatially resolved spectroscopy at micro-cracks in AlGaN layers.
In: Nitride semiconductors (International workshop Nagoya November 30, 2000). - proceedings. Tokyo : IPAP, 2000, S. 475 - 478 (IPAP conference series 1)

Originalartikel in begutachteter internationaler Zeitschrift
Meister, D. (ext.);  Christen, Jürgen;  Bertram, Frank;   

A comparison of the hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films.
In: Journal of applied physics [New York, NY] 88(2000), Nr. 4, S. 1811 - 1817

Holst, J. (ext.);  Kaschner, A. (ext.);  Gfug, U. (ext.);  Hoffmann, A. (ext.);  Thomsen, C. (ext.);  Bertram, Frank;  Riemann, Till;  Rudloff, Dirk;  Fischer, P. (ext.);  Christen, Jürgen;  Averbeck, R. (ext.);  Riechert, H. (ext.);  Heuken, M. (ext.);  Schwambera, M. (ext.);  Schoen, O. (ext.) 

Comparison of the mechanism of optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy and MOCVD.
In: Physica status solidi, A = applied research [Berlin] 180(2000), S. 327 - 332

Hiramatsu, K. (ext.);  Bertram, Frank;  Christen, Jürgen;  Hoffmann, A. (ext.);   

Crystalline and optical properties of ELO GaN by HVPE using Tungsten mask.
In: IEICE transactions on electronics, E = english transactions [Tokyo] 83(2000), Nr. 4, S. 620 - 626

Heiss, W. (ext.);  Riemann, Till;  Bertram, Frank;  Rudloff, D.;  Christen, Jürgen;  ..., (ext.);   

Exciton dynamics in ZnCdSe/ZnSe ridge quantum wires.
In: Physica, E = low-dimensional systems & nanostructures [Amsterdam] 7(2000), S. 526 - 530 Unter URL: http://www.elsevier.nl/locate/physe (Stand vom: 28.06.2000)

Topf, M. (ext.);  Krtschil, Andre;  Witte, Hartmut;  Veit, Peter;  Christen, Jürgen;   

GaN/SiC heterojunctions grown by LP-CVD.
In: Solid state electronics : SSE [London] 44(2000), S. 271 - 275

Liu, Quincy (ext.);  Hoffmann, Axel (ext.);  Kaschner, Axel (ext.);  Thomson, Christian (ext.);  Christen, Jürgen;  Veit, Peter;  Clos, Rainer 

Local stress analysis of epitaxial laterally-overgrown GaN.
In: The journal of the japan society of applied physics [Tokyo] 39(2000), Nr. 10 A, Part 2, S. L958 - L960

Kaschner, A. (ext.);  Bertram, Frank;  Riemann, Till;  Christen, Jürgen;   

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks : a method to map the free-carrier concentration of thick GaN samples.
In: Applied physics letters [Knoxville, Tenn.] 76(2000), Nr. 23, S. 3418 - 3420

Bertram, Frank;  Lipinski, M. (ext.);  Riemann, Till;  Rudloff, D.;  Christen, Jürgen;  Veit, Peter;  Clos, Rainer;  Eberl, K. (ext.) 

Optical and structural characterization of a self-aligned single electron transitor structure by cathodoluminescence microscopy.
In: Physica, E = low-dimensional systems & nanostructures [Amsterdam] 7(2000), S. 363 - 366 Unter URL: http://www.elsevier.nl/locate/physe (Stand vom: 28.06.2000)

Krtschil, Andre;  Witte, Hartmut;  Lisker, Marco;  Christen, Jürgen;  Krost, Alois;  Birkle, U. (ext.) 

Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy.
In: Applied physics letters [Knoxville, Tenn.] 77(2000), Nr. 4, S. 546 - 548

Fischer, Peter;  Christen, Jürgen;  Nakamura, Shuji (ext.) 

Spectral electroluminescence mapping of a blue InGaN single quantum well light-emitting.
In: Japanese journal of applied physics : JJAP, Part 2 = Letters [Tokyo] 39(2000), Nr. 2B, S. L129 - L132

Holst, J.C. (ext.);  Rudloff, D.;  Bertram, Frank;  Riemann, Till;  Christen, Jürgen;  ..., (ext.);   

The origin of optical gain in cubic InGaN grown by molecular beam epitaxy.
In: Applied physics letters [Knoxville, Tenn.] 76(2000), Nr. 20, S. 2832 - 2834

Kaschner, A. (ext.);  Bertram, Frank;  Riemann, Till;  Christen, Jürgen;  ..., (ext.);   

Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN.
In: Journal of luminescence [Amsterdam] 87/89(2000), Nr. 1/4, S. 1192 - 11956

Originalartikel in begutachteter zeitschriftenartiger Reihe
Bertram, Frank;  Riemann, Till;  Rudloff, Dirk;  Christen, Jürgen;  Kaschner, A. (ext.) 

Comparison of different epitaxial lateral overgrowth GaN structures using SiO2 and Tungsten mask by cathodoluminescence microscopy and micro-Raman spectroscopy.
In: Carter, Calvin H. (Hrsg.) ; ... (Hrsg.): Silicon carbide and related materials 1999 (International conference Research Triangle Park, NC, USA, October 10 - 15, 1999). Zürich-Uetikon : Trans Tech Publ., 2000, S. 1483 - 1486 (Materials science forum 338/342)

Lisker, Marco;  Witte, Hartmut;  Krtschil, Andre;  Christen, Jürgen 

Enhancement of UV-sensitivity in GaN / GaAs heterostructures by Si-doping.
In: Carter, Calvin H. (Hrsg.) ; ... (Hrsg.): Silicon carbide and related materials 1999 (International conference Research Triangle Park, NC, USA, October 10 - 15, 1999). Zürich-Uetikon : Trans Tech Publ., 2000, S. 1591 - 1594 (Materials science forum 338/342)

Holst, J. (ext.);  Fischer, Peter;  Bertram, Frank;  Riemann, Till;  Christen, Jürgen;   

Impact of epitaxial lateral overgrowth on the recombination dynamics in GaN determinated by time resolved micro-photoluminescence spectroscopy.
In: Carter, Calvin H. (Hrsg.) ; ... (Hrsg.): Silicon carbide and related materials 1999 (International conference Research Triangle Park, NC, USA, October 10 - 15, 1999). Zürich-Uetikon : Trans Tech Publ., 2000, S. 1575 - 1578 (Materials science forum 338/342)

Koorperationen
  • Prof. Dr. Fernando Ponce, Arizona State University, Tempe AZ, USA
  • Prof. Dr. Enrique Calleja Prado, Polytechnic Institute Madrid, Spain
  • Prof. Dr. Hadis Morkoc, Virginia Commenwealth University, Richmond, VA, USA
  • Prof. Dr. Bernard Gil, CNRS Universit de Montpellier II , France
  • Prof. Dr. Nicolas Grandjean, Ecole Politechnique Federale de Lausanne, Switzerland
  • Dr Eva Monroy, CEA Institut Nel, Grenoble, France
  • Prof. Dr. Matthew Phillips, University of Technology Sydney, Australia
  • Prof. Dr. Hiroshi Amano, Nagoya University, Japan
  • Prof. Dr. Roland Scheer, Martin Luther-Universität Halle-Wittenberg, FG Photovoltaik, Germany
  • Prof. Dr. Susanne Siebentritt, L&8217;Universit du Luxembourg, Luxembourg
  • Prof. Dr. Andreas Waag, Institut für Halbleitertechnik, TU Braunschweig, Germany
  • Prof. Dr. Andreas Rosenauer, Universität Bremen, Germany
  • Prof. Dr. Axel Hoffmann, Institut für Festkörperphysik, TU Berlin, Germany
  • Dr. Stacia Keller, Solid State Lighting & Energy Electronics Center, UCSB, Santa Barbara, CA, USA
  • Dr. Albert Davydov, Material Measurement Laboratory, NIST, Gaithersburg, MD, USA
Profil
Forschungsprofil
  • Experimentalphysik
  • Festkörperphysik
  • Halbleiterphysik
  • Optoelektronik
  • Photonik
  • photonic bandgap
  • light-matter interaction
Service
Beratung und Gutachten im Themenfeld
  • Experimentalphysik
  • Festkörperphysik
  • Halbleiterphysik
  • Optoelektronik
  • Photonik
  • photonic bandgap
  • light-matter interaction
Vita
1977 - 1983Studium der Physik an der RWTH Aachen
1988Promotion zum Dr. rer. nat. an der Technischen Universität Berlin
1990 - 1991postdoc bei Bell Communications Research, BELLCORE, Red Bank, New Jersey, USA
1993Forschungsaufenthalt am Institute for Scientific and Industrial Research ISIR, Osaka University, Japan
1992Habilitation für das Fach Experimentalphysik an der Technischen Universität Berlin, Ernennung zum Privatdozenten
1983 - 1988wissenschaftlicher Mitarbeiter am Institut für Festkörperphysik, Technische Universität Berlin
1988 - 1993Oberingenieur (C2) am Institut für Festkörperphysik, Technische Universität Berlin
seit 1.1.1994Ordentlicher Professor (C4) für Experimentalphysik/ Festkörperphysik, Institut für Experimentelle Physik,Otto-von-Guericke-Universität Magdeburg
2001 - 2002Forschungsaufenthalt (sabbatical) am Dep. of Physics and Astronomy, Arizona State University, ASU, Tempe/Phoenix, Arizona, USA
1998 - 2002
2008 - 2012
Dekan der Fakultät für Naturwissenschaften, Otto-von-Guericke-Universität Magdeburg

2002 - 2008
2012 - 2016
Senator der Otto-von-Guericke-Universität Magdeburg

2012 - 2016
Prorektor für Planung und Haushalt
1989Carl Ramsauer Preis der AEG
1989Oyo Buturi Preis der Japanese Society of Applied Physics
2009
Otto-von-Guericke Forschungspreis
presse
Forschungsschwerpunkte:Mikroskopische Charakterisierung innovativer Halbleitersysteme für neuartige Bauelementanwendungen in der Nano- und Optoelektronik. Korrelation der strukturellen, elektronischen und optischen Eigenschaften von:- Halbleiter-Nanostrukturen: Quantum Wells, Supergitter, Quantenfäden und Quantenpunkten- Photonische Strukturen (Licht-Materie-Kopplung, Micro Cavities, Photonic Bandgap)- Neue "wide-gap" Halbleitermaterialien für Optoelektronik im grünen, blauen, violetten und UV - Ordnungs- und Entmischungsphänomene in ternären und quaternären Halbleitern: GaInP, InGaN, AlGaN, ... - Halbleiterbauelemente: LEDs, Laser, Detektoren, Sensoren, Ein-Elektronen-Transistoren- Entwicklung neuartiger hochauflösender bildgebender Lumineszenzmeßmethoden mit submikroskopischer bis atomarer Ortsauflösung

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